Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
87 (2000), S. 2158-2161
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We implanted n-type silicon with 1.6 MeV helium at fluences ranging from 1×1016 to 1×1017 He/cm2 while keeping a constant dose rate. These samples were then subjected to 800 °C annealing for 30 min. The results obtained by means of cross-sectional transmission electron microscopy indicate that the density of cavities is fluence dependent with homogeneous distribution of cavity sizes when fluences of 5×1016 and 1017 He/cm2 are used. The threshold fluence required to form cavities is found to be between 1 and 2×1016 He/cm2. For the 2×1016 He/cm2 dose, we observed loop punching induced by a concerted action of overpressurized bubbles, whereas He implants at doses of 5×1016 and 1×1017/cm2 lead to the formation of {311} defects. At the same time, non Rutherford elastic backscattering (NREBS) experiments using 2.5 MeV H+ provide the fraction of helium remaining in cavities after different annealing times at 800 °C. The NREBS data show a fast He release process for short annealing times (〈2000 s). Then, the He amount decreases slowly and after 30 000 s about 40% of the helium still remain in cavities. Finally, an additional implantation with 50 keV He at 5×1016 He/cm2 shows the difference in cavity size distribution between MeV and keV implantation. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.372155
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