Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
67 (1995), S. 1322-1324
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have studied nucleation and growth characteristics of diamond on nickel with AlN buffer layers. The diamond deposits on partially filled 3-d shell transition metals such as Ni, Fe, and Co usually result in the formation of interposing graphite layers which cause poor adhesion of diamond overlayers. To minimize and preferably eliminate the formation of the interposing graphite layer, we coated nickel substrate with ∼1000 A(ring) thick AlN layer by using pulsed laser deposition and subsequently, subjected them to diamond deposition by hot filament chemical vapor deposition method. It is found that the aluminum nitride layer plays a crucial role in limiting carbon diffusion and inhibiting the formation of graphitic carbon and simultaneously enhancing the nucleation and adhesion of diamond phase. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.114527
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