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  • 1
    ISSN: 0009-2614
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 0009-2614
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 7504-7521 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The validity of the actinometry method applied to H-atom mole fraction measurements has been analyzed. First, a theoretical approach allowed us to determine boundary conditions for which the validity of actinometry may be critical. For these specific conditions, corresponding to an upper limit of electron temperature of 20 000 K and a lower limit of H-atom mole fraction of 2%–4%, spatial distributions of the ground state H-atom relative densities provided either by two photon allowed transition or by optical emission spectroscopy (OES) were compared and seen to be proportional. This proves that the H atoms excited in the level of quantum number n=3 (level used for OES experiments) are produced directly from the ground electronic state during collisions with electrons. Actinometry can then be applied under these experimental conditions. Second, the emission intensity ratio of two lines issued from excited states of argon was demonstrated to be indirectly related to the "electron temperature" of the hot electrons of the plasma. This allowed us to predict the way of evolution of the plasma electrons' energy as a function of the operating conditions. Thus, experiments (which have been confirmed by calculations) showed that the electron energy decreases as a function of the microwave power density and remains constant as a function of the methane percentage introduced in the feed gas at least up to 6%. The consequence is that the domain of diamond deposition discharge conditions for which actinometry is valid is quite wide. Once the microwave volumetric power density is more than 9 W cm−3, and the percentage of methane less than 6%, actinometry can be applied. However, the estimation of variations of H-atom mole fractions as a function of the operating conditions implies the use of correcting factors, which are discussed. They are mainly due to the large influence of the quenching processes under these experimental conditions. An experimental estimate of the quenching cross section of the H(n=3) atoms by ground state molecular hydrogen, which was unknown and involved in the correcting factors, is presented. Finally, relative variations of H-atom mole fraction in space and as a function of the methane percentage are shown. © 1998 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Surface & Coatings Technology 45 (1991), S. 201-207 
    ISSN: 0257-8972
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Surface & Coatings Technology 45 (1991), S. 201-207 
    ISSN: 0257-8972
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Applied Surface Science 36 (1989), S. 520-529 
    ISSN: 0169-4332
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
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  • 7
    ISSN: 1572-8986
    Keywords: Electron energy distribution function ; transport coefficients ; diamond films ; CH4/HZ plasma
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Electron energy distribution functions (eedf) and rate and transport coefficients for H2/H/CH4 mixtures have been calculated by solving a stationary Boltzmann equation as a function of reduced electric field E/N, of molar fraction, and of different concentrations of electronically excited states. Superelastic electronic collisions superimpose structures to eedf especially for E/N values 〈 40 Td.
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Plasma chemistry and plasma processing 20 (2000), S. 1-12 
    ISSN: 1572-8986
    Keywords: Microwave plasma ; diamond deposition ; ultraviolet absorption spectroscopy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Absolute line-of-sight averaged measurements of methyl radical concentrationsin a microwave plasma-assisted diamond deposition reactor arepresented. The measurements are based on the use of broadband ultravioletabsorption spectroscopy to characterize the distinguishing absorptionfeature of methyl at 216 nm associated with the X(2A″2)→(2A′1) electronictransition. The dependence of the line-of-sight methyl concentration andmole fractions with the percentage of methane in the feed-gas, plasma powerdensity, and position of substrate relative to the optical probe volume isstudied. The measurements suggest that the near-substrate methyl molefraction is only weakly sensitive to changes in substrate temperature andare largely influenced by the gas-phase temperature. A comparison is madebetween the measured mole fractions and recent predictions based on aone-dimensional model of this process. The measured mole fractions areconsistently greater than those predicted by about a factor of ten. Thisdiscrepancy is explained in part by the line-of-sight limitations in theexperimental facility.
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Plasma chemistry and plasma processing 18 (1998), S. 325-362 
    ISSN: 1572-8986
    Keywords: Microwave plasma ; diamond deposition ; modeling
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract One-dimensional transport models of moderate-pressure H 2 and H 2 /CH 4 plasmas obtained in a diamond deposition microwave reactor are presented. These models describe the plasma as a thermochemically nonequilibrium flow with three different energy modes. The solution of the one-dimensional plasma transport equations enabled the estimation of plasma species concentrations and temperatures on the axis of the reactor. As far as pure H 2 plasmas are concerned, results showed that the model predictions of gas and vibration temperatures are in good agreement with experimental measurements. The model also yields a relatively good qualitative prediction of the variations of H-atom mole fraction with the power density absorbed by the plasma. The results obtained for H 2 /CH 4 discharges showed that the model prediction on the variations of H-atom mole fraction with methane percentage in the discharge is in good qualitative agreement with experimental results. They also showed that methane is rapidly converted to acetylene before reaching the discharge zone. The concentrations of neutral hydrocarbon species in the reactor are mainly governed by thermal chemistry. The addition of methane strongly affects the ionization kinetics of the plasma. Three major ions are generally obtained in H 2 /CH 4 plasmas: C 2 H 2 + , C 2 H 3 + , and C 2 H 5 + . The relative predominance of these ions depends on the considered plasma region and on the discharge conditions. The ionic species concentrations are also mainly governed by chemistry, except very near the substrate surface. Finally the use of this transport model along with the surface chemistry model of Goodwin (1) enabled us to estimate the diamond growth rate for several discharge conditions.
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Fresenius' Zeitschrift für analytische Chemie 324 (1986), S. 384-396 
    ISSN: 1618-2650
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Description / Table of Contents: Summary The large development of industrial plasma techniques is due to new understanding of chemical concepts of reactive gases excited by electron impact. In this way, it is possible to obtain larger operational facilities of the processes, i.e.: the elimination of wet treatment and flexibility of tools. Therefore, many engineers agree on the widespread application of these technologies. The numerous advantages of plasma techniques are realized by two different concepts according to the equilibrium of the reactive systems (atmospheric system with gas temperature = electronic temperature) or non-equilibrium systems (rotational temperature = translational temperature = 500° K — vibrational temperature = 500° K — vibrational temperature 〉3,100° K — electronic temperature 〉 1 to 2 eV). For the high pressure torch, both the thermal and chemical properties of the plasma mixture are employed at the same moment which lead to high temperature reactions, high kinetic rates, and short residence times. These tools are used today for extractive metallurgy, oil treatment, plasma spray, optical fibers, and production of high purity materials. We have chosen to present them through the example of silicon refining by a RF plasma torch. The multiphase extractive process controls the efficiency of the treatment. At the liquid-plasma interface the evaporation of the impurities is measured by emission spectroscopy with an optical fiber (K, Na, Mg). The working parameters of the system [plasma gas composition (O2, H2, Ar), Rf-power source, speed of the treatment] can be adjusted by such measures. The photovoltaic efficiency of the materials has been determined in correlation with the spectroscopic measurements. For the low pressure plasma reactor, the chemical properties are studied by measuring the vibrational level of the excited molecular species. For instance, reactive levels of vibrational states increase the kinetic rate by a factor of 104 to 106 with a gas temperature approaching room temperature. In this way, a large number of industrial applications has been developed with a glow discharge reactor and a corona discharge reactor essentially for surface treatment such as etching, grafting, polymerization, nitriding, deposition etc. We have chosen to explain the nitriding process of metals and silicon in order to point out the role of vibrational species and particularly, those of the NH molecules. These results are correlated with the evolution of the hardness of the material and the conversion rate of the reactive molecule.
    Notes: Zusammenfassung Die starke Entwicklung industrieller Plasmaverfahren ist auf neue chemische Konzepte der Anregung von reaktiven Gasen durch Elektronenstöße zurückzuführen. So wird es möglich, die Durchführung des Prozesses besser zu steuern, d. h. eine nasse Behandlung zu vermeiden und flexibler zu sein. Entsprechend bevorzugen viele Ingenieure diese Verfahren. Die Vorteile der Plasmaverfahren kann man in verschiedenen Systemen realisieren, nämlich in reaktiven Systemen im thermischen Gleichgewicht (atmosphärischer Druck, wobei Gastemperatur und Elektronentemperatur gleich sind) oder in Systemen, die nicht im thermischen Gleichgewicht sind (Rotationstemperatur ≠ Elektronentemperatur oder Rotationstemperatur = Translationstemperatur = 500 K, Vibrationstemperatur 〉3100 K, Elektronentemperatur 〉1–2 eV). Im Falle eines bei hohem Druck betriebenen Plasmabrenners bewerkstelligen die thermischen und die chemischen Eigenschaften des Plasmas eine Reaktion bei hoher Temperatur, hohe Reaktionskonstanten und kurze Aufenthaltszeiten. Diese Verfahren werden heute eingesetzt in der extraktiven Metallurgie, in der Behandlung von Ölen, in der Plasmaspritztechnik und für die Herstellung von optischen Fasern und Reinststoffen. Sie werden in diesem Beitrag anhand der Darstellung von hochreinem Silicium in einem Hochfrequenzplasmareaktor besprochen. Die Ausbeute der Behandlung wird über einen vielphasigen Extraktionsprozeß gesteuert. Die Verflüchtigung von Verunreinigungen (K, Mg, Na) im Grenzbereich zwischen Flüssigphase und Plasma wird mit Hilfe von optischen Fasern emissionsspektrometrisch gemessen. Die Betriebsparameter des Systems und Zusammensetzung des Plasmagases (O2, H2, Ar), Hochfrequenzleistung, Reaktionsgeschwindigkeit werden hierüber gesteuert. Die photovoltaischen Eigenschaften des hergestellten Siliciums wurden untersucht und ihre Korrelation mit den spektroskopisch gemessenen Größen überprüft. Im Fall von Plasmareaktoren bei niedrigem Druck sind die chemischen Eigenschaften von den Vibrationsniveaus der angeregten Moleküle abhängig. Zum Beispiel nimmt die Reaktionsgeschwindigkeit bei einer Gastemperatur, die in der Nähe der Umgebungstemperatur liegt, infolge reaktiver Vibrationsniveaus um einen Faktor 104 bis 106 zu. Zahlreiche industrielle Anwendungen von Glimmentladungen oder Coronarentladungen wurden dementsprechend entwickelt, hauptsächlich für Oberflächenbehandlungen wie Ätzen, Implantieren, Polymerisieren, Nitrieren oder Beschichten. Anhand der Nitrierung von Metallen und von Silicium wird der Einfluß des Vibrationsniveaus, insbesondere von NH-Molekülen besprochen. Die Ergebnisse stehen in Zusammenhang mit der Härte des Materials sowie der Reaktionsrate des reaktiven Moleküls.
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