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  • 1
    Electronic Resource
    Electronic Resource
    Tentative study of flow patterns in the North Aegean Sea using NOAA-AVHRR images and 2D model simulation (1997)
    Springer
    Annales geophysicae 14 (1997), S. 1221-1231 
    Details
    ISSN: 0992-7689
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences , Physics
    Notes: Abstract A statistical technique for image processing, the maximum cross correlation (MCC) method, was utilized on sequences of NOAA-AVHRR thermal data in order to explore the surface advective current dynamics at the discharge region of the Hellespont in the North Aegean Sea. A 2D numerical flow model was also used in order to simulate the barotropic flow pattern of the surface water layer. The model was forced with diurnal wind fields obtained for the same period as the satellite infrared images. The currents (magnitude and direction) derived from the two methods compare satisfactorily despite the fact that some model simplifications were made.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s00585-996-1221-1
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  • 2
    Electronic Resource
    Electronic Resource
    Shallow junctions by out-diffusion from BF2 implanted polycrystalline silicon (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3707-3713 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe reverse bias diode leakage and physical analysis (secondary ion mass spectroscopy, Rutherford backscattering and transmission electron microscopy) data from shallow p+/n junctions made by implanting various doses of BF2 into polycrystalline Si and out-diffusing at various temperature/time conditions, into the underlying (100) Si substrate. The polycrystalline Si is cobalt disilicided to provide the first level of metallization. Subsequent metallization consists of electroless plated Co followed by sputtered Al. The minimum process specifications giving good junction quality (reverse bias diode leakage current density ≤10 nA/cm2 at 10 V) are 5×1015 cm−2 BF2 outdiffused at 900 °C, 30 min with a junction depth 1200 A(ring) below the polycrystalline Si. At these conditions, most of the BF2 (〉90%) uniformly redistributes in the polycrystalline Si. There is a slight increase in B concentration towards the polycrystalline Si/Si interface which is characterized by a porous, 〈50-A(ring) thin silicon oxide interface. The polycrystalline Si/Si interface is also characterized by a peaked fluorine concentration. The lower boron dose diffusing into the Si substrate may be used to explain the observation that these p+/n diodes are ∼10 times leakier than similar n+/p diodes made by outdiffusing As or P implanted from the polycrystalline Si diffusion source.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346335
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  • 3
    Electronic Resource
    Electronic Resource
    Shallow junctions by out-diffusion from Arsenic implanted polycrystalline silicon (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3714-3722 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe reverse bias diode leakage and physical analysis (secondary ion mass spectroscopy, Rutherford backscattering and transmission electron microscopy) data from shallow n+/p junctions made by implanting various doses of arsenic into polycrystalline Si and out diffusing at various temperature/time conditions, into the underlying (100) Si substrate. The polycrystalline Si is cobalt disilicided to provide the first level of metallization. The minimum process specifications giving good junction quality (reverse bias diode leakage current density ≤10 nA/cm2 at 10 V) are 7×1015 cm−2 As out diffused at 950 °C, 30 min with a junction depth 1200 A(ring) below the polycrystalline Si. At these conditions, most of the As ((approximately-greater-than)90%) uniformly redistributes in the polycrystalline Si. There is a segregation to the polycrystalline Si/Si interface which is characterized by a porous, 〈50 A(ring) thin silicon oxide interface. The polycrystalline Si/Si interface is also characterized by a laterally non-uniform large grain(∼2000 A(ring)) or epitaxial regrowth at the 950 °C process temperature. These interface conditions may be used to explain the ∼20% high leakage population which is independent of out-diffusion condition at high As dose. Such a high sport population is not observed when P is implanted into polycrystalline Si and out diffused at 900 °C, 30 min to obtain ∼2500-A(ring)-deep junctions below the polycrystalline Si/Si interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346309
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  • 4
    Electronic Resource
    Electronic Resource
    The effect of the chemical vapor deposition of tungsten on shallow n+p and p+n junctions using titanium-tungsten as a barrier (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2839-2844 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of blanket chemical vapor deposition (CVD) of tungsten (SiH4 reduction) on shallow CoSi2 junctions using 450–1800 A(ring) of titanium-tungsten (TiW) as a diffusion barrier has been investigated. Thermal stability of W/TiW and Al/W/TiW is studied by measuring the reverse leakage current at 25 °C anneal intervals. The Al/TiW structure has been used as a reference. W/TiW junctions with ≤700 A(ring) of TiW are less stable than Al/TiW junctions. The addition of Al on top of CVD W enhances the junction degradation considerably. p+n junctions are more sensitive to the barrier failure. The effect of CVD W deposition temperature has been studied. Junctions exposed to 480 °C CVD W deposition temperature showed a lower leakage than those at 300 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346465
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  • 5
    Electronic Resource
    Electronic Resource
    BF2 implanted polycrystalline silicon gates with and without CoSi2: Microstructure and work functions (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1510-1517 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure and metal-silicon work function was evaluated for polycrystalline Si (poly-Si) films (∼3500 A(ring)) implanted with BF2, with and without a CoSi2 superlayer. The poly-Si implant doses were 2, 4, and 6×1015 cm−2, activated at 800–950 °C, for various times. The work function is observed to be dependent upon the BF2 dose, the anneal time, the anneal temperature, and independent of the presence of a thin CoSi2 superlayer subsequently sintered on the poly-Si. The work function is not affected by additional implants into a CoSi2 superlayer. The measured work function for this material is shifted to more positive values by penetration of boron from the gate, into the oxide and possibly into the substrate during a (approximately-greater-than)900 °C activation cycle. The major correlation of CoSi2/poly-Si interface roughness is with poly-Si grain size. The interface becomes smoother as the poly-Si grain size becomes smaller. Similarly, the maximum extent of CoSi2 asperities is less for Co sintered on BF2 implanted poly-Si when the poly-Si is activated at 900 °C (smaller grain size) rather than at 950 °C. Within statistical limitations of cross-section transmission electron microscopy and sensitivity limitations of Rutherford backscatterings, CoSi2 asperities do not extend close enough to the (4000-A(ring)-thick) poly-Si/SiO2 interface to affect complimentary metal-oxide-semiconductor device characteristics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347241
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  • 6
    Electronic Resource
    Electronic Resource
    Evolution of some isolated disturbances to Jeffery–Hamel flow (1987)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 30 (1987), S. 3838-3840 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stability of Jeffery–Hamel flow in a divergent wedge is considered by means of some initially localized disturbances, whose evolution downstream with time is studied by an integral of fixed frequency modes with respect to the frequency parameter. It is found, typically, that even in regions of parameter space that are nominally "unstable,'' the original localized disturbance grows very little before decaying downstream.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.866423
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  • 7
    Electronic Resource
    Electronic Resource
    Practical applications of engineering Gram-negative bacterial cell surfaces
    Amsterdam : Elsevier
    Trends in Biotechnology 11 (1993), S. 6-10 
    Details
    ISSN: 0167-7799
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0167-7799(93)90068-K
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  • 8
    Electronic Resource
    Electronic Resource
    Tetraaquabis(5-nitrotetrazolato-N2)nickel(II) (1987)
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 43 (1987), S. 659-661 
    Details
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108270187094629
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  • 9
    Electronic Resource
    Electronic Resource
    Methods of fundamental solutions for harmonic and biharmonic boundary value problems (1998)
    Springer
    Computational mechanics 21 (1998), S. 416-423 
    Details
    ISSN: 1432-0924
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract In this work, the use of the Method of Fundamental Solutions (MFS) for solving elliptic partial differential equations is investigated, and the performance of various least squares routines used for the solution of the resulting minimization problem is studied. Two modified versions of the MFS for harmonic and biharmonic problems with boundary singularities, which are based on the direct subtraction of the leading terms of the singular local solution from the original mathematical problem, are also examined. Both modified methods give more accurate results than the standard MFS and also yield the values of the leading singular coefficients. Moreover, one of them predicts the form of the leading singular term.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s004660050320
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  • 10
    Electronic Resource
    Electronic Resource
    The method of fundamental solutions for inhomogeneous elliptic problems (1998)
    Springer
    Computational mechanics 22 (1998), S. 100-107 
    Details
    ISSN: 1432-0924
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract We investigate the use of the Method of Fundamental Solutions (MFS) for solving inhomogeneous harmonic and biharmonic problems. These are transformed to homogeneous problems by subtracting a particular solution of the governing equation. This particular solution is taken to be a Newton potential and the resulting homogeneous problem is solved using the MFS. The numerical calculations indicate that accurate results can be obtained with relatively few degrees of freedom. Two methods for the special case where the inhomogeneous term is harmonic are also examined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s004660050344
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