ISSN:
1435-1536
Schlagwort(e):
surface potential
;
oxide/solution interface
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Chemie und Pharmazie
,
Maschinenbau
Notizen:
Abstract A method for direct measurement of surface-potential changes at the oxide/electrolyte interface is described. It is based upon the semiconductor effect, and, in contrast to the well-known transistor method, it uses an easier-to-prepare field-effect diode. Measurements of the systems SiO2/electrolyte solution and Al2O3/electrolyte solution show, that the Nernst relation is only valid for Al2O3, whereas in the case of SiO2, besides H+ and OH− ions, also electrolyte ions of alkaline chlorides and MgCl2 are potential-determining.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1007/BF01451674
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