Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
77 (2000), S. 2298-2300
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Mid-infrared laser diodes with compressively strained InAsSb/InAs type-II slightly coupled quantum wells are reported. These lasers, grown on InAs by molecular-beam epitaxy, have emission wavelength near 3.5 μm. They exhibit pulsed operation up to 220 K, with at 90 K threshold current density of 150 A/cm2. Ridge lasers continuous wave (cw) operated up to 130 K with cw output power of 40 mW/A/facet and a characteristic temperature T0=40 K. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1317537
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