Publication Date:
2015-05-20
Description:
The performance of InGaAs metal oxide semiconductor field effect transistors with Al 2 O 3 or HfO 2 as gate oxide is evaluated and compared. The Al 2 O 3 transistors show the lowest subthreshold slope and mid gap D it , however, the HfO 2 transistors reach a higher maximum transconductance ( g max ) due to the higher oxide capacitance. Both high- κ dielectrics show a g m -frequency dispersion due to tunneling into border traps with a negligible activation energy as determined from temperature dependent measurements. The total amount of trapped charge at border traps is lower in the HfO 2 devices. Scaling the HfO 2 thickness further reduces the g m -frequency dispersion, possibly due to detrapping to the gate electrode.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics
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