ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Silicon is an amphoteric impurity of gallium arsenide that is present in different defect configurations. This work reports on the effects of heat treatment on defect reactions of heavily silicon-doped gallium arsenide crystals. The distribution of segregation, lattice parameter, and electrical properties was studied for several heat treatments. When the crystals were bulk-annealed at between 700 °C and 1000 °C for 20 h, zone-distributed segregation was observed at the area with a silicon concentration of about 1×1019 cm−3 by etching and x-ray topography. Regions observed to have silicon-related segregation exhibited a decrease in lattice parameter when the crystals were annealed below 850 °C for 20 h then quenched. In addition, such regions exhibited little change in lattice parameter when the crystals were annealed above 850 °C. For electrical properties, the largest decrease in carrier concentration and mobility of such regions was observed when the crystals were annealed at 700 °C. This change in the characteristics of such regions seems to be affected not only by heavily doped silicon but also by excess arsenic.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.353202
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