Publication Date:
2011-08-24
Description:
Elemental (Ge) and alloy (PbSnTe) crystal growth that is monitored via radiography to reveal both the interface position and the shape in real time is discussed for both seeded and unseeded growth. It is concluded that the interface position and the actual growth rate of a Bridgman grown crystal is dependent on the growth conditions. The actual growth rate which is a strong function of the degree of supercooling exceeded the pull rate by a factor of greater than two. The interface shape changed from concave to flat to convex during the growth.
Keywords:
MATERIALS PROCESSING
Type:
In: Crystal growth in space and related optical diagnostics; Proceedings of the Meeting, San Diego, CA, July 22, 23, 1991 (A93-33051 12-29); p. 236-244.
Format:
text
Permalink