ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Erratum: "Transport properties of GaAs1−xNx thin films grown by metalorganic chemical vapor deposition" [Appl. Phys. Lett. 77, 3794 (2000)] (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 559-559 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1346587
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    BGaInAs alloys lattice matched to GaAs (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1443-1445 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the epitaxial growth of zinc-blende BxGa1−x−yInyAs and BxGa1−xAs on GaAs substrates with boron concentrations (x) up to 2%–4% by atmospheric-pressure metalorganic chemical vapor deposition. The band gap of BxGa1−xAs increases by only 4–8 meV/%B with increasing boron concentration in this concentration range. We demonstrate an epitaxial BxGa1−x−yInyAs layer deposited on GaAs with a band gap of 1.34 eV that is significantly less strained than a corresponding Ga1−yInyAs layer with the same band gap. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126058
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Transport properties of GaAs1−xNx thin films grown by metalorganic chemical vapor deposition (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3794-3796 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of devices with the structure GaAs/GaAs1−xNx/GaAs and 0.01〈x〈0.03 have been grown by metalorganic chemical vapor deposition. The transient photoconductive decay of these structures is measured as a function of excitation wavelength and injection level. The decay process is generally described by a stretched exponential function with anomously large decay times. The photoconductive excitation spectrum extends into the infrared, well beyond the bandgap of the given alloy. The processes here can be explained by nitrogen clusters that produce charge separation. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1328774
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Evidence of an oxygen recombination center in p+–n GaInNAs solar cells (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2397-2399 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied deep-level impurities in p+–n GaInNAs solar cells using deep-level transient spectroscopy (DLTS). These films were grown by atmospheric- and low-pressure metalorganic vapor-phase epitaxy. The base layer is doped with silicon, and the emitter layer is zinc doped. Two types of samples have been studied: samples were grown with and without the addition of oxygen impurity. Two electron traps were found in all samples. These are designated as: E1, at EC−0.23–EC−0.27 eV, E2 at EC−0.45 eV, and E2* at 0.77 eV. With the addition of oxygen impurity, DLTS showed additional traps designated as E3 (electron) at EC−0.59 eV and H3 (hole) at EV+0.59 eV. Using secondary ion mass spectroscopy, the oxygen concentration was found to be about 2–3×1019 and 1×1017 cm−3 in two sets of samples. However, only samples containing oxygen contained the two near-midgap levels (E3 and H3). We present evidence that these levels are associated with the oxygen defect. As we change the dc bias voltage, the E3 trap disappears in unison with the appearance of the H3 trap. Furthermore, E3 and H3 trap levels have comparable capture cross sections. This oxygen-related trap is an effective recombination center. The measured Shockley–Hall–Read lifetime for this center is about 0.6 μs. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126383
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Effect of faceting on the band gap of ordered GaInP (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 878-880 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has been shown that under certain growth conditions the pseudobinary semiconductor alloy GaInP shows cation site ordering into the Cu-Pt structure, and that this ordering results in a lowering of the band gap Eg from that of the disordered alloy. The Eg lowering is known to depend on growth conditions, including the orientation of the substrate. We study the dependence of Eg on epilayer thickness for GaInP grown by metal-organic vapor-phase epitaxy. For epilayers grown on singular (100) substrates under growth conditions conventionally used to produce ordered material, Eg decreases dramatically with increasing epilayer thickness: Eg for a 10-μm-thick epilayer is ∼40 meV lower than for a 1-μm-thick epilayer. This dependence of Eg on thickness can be understood in terms of the recently observed faceting of the GaInP growth surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112188
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Effects of strain, substrate misorientation, and excitonic transition on the optical polarization of ordered zinc-blende semiconductor alloys (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6365-6373 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical polarization in ordered GaInP2 alloys has been studied by low-temperature photoluminescence. A perturbative theory that includes the effects of lattice mismatch, substrate misorientation, and excitonic transitions has been developed for making quantitative comparisons between experimental results and theoretical predictions. We show that to obtain quantitative information about ordering from the polarization of near-band-gap transitions, all of the above-mentioned effects should be taken into account. This study demonstrates that the electronic and optical properties of a monolayer superlattice formed by partial ordering in the GaInP2 alloy can be well described by a simple perturbative Hamiltonian, i.e., a quasicubic model. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364390
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Selection of substrate orientation and phosphorus flux to achieve p-type carbon doping of Ga0.5In0.5P by molecular beam epitaxy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1095-1097 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that the p-type doping of Ga0.5In0.5P grown by solid-source molecular beam epitaxy using CBr4 as a carbon source is very strongly dependent upon the phosphorus flux and upon the substrate misorientation from (100). High densities of A-type steps and low phosphorus flux favor the incorporated carbon acting as a p-type dopant. We demonstrate that with the substrate orientation and phosphorus flux chosen to satisfy these two criteria, doping of C:Ga0.5In0.5P into the mid-1018 holes/cm3 range can be achieved for the as-grown material. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119737
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    29.5%-efficient GaInP/GaAs tandem solar cells (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 989-991 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on multijunction GaInP/GaAs photovoltaic cells with efficiencies of 29.5% at 1-sun concentration and air mass (AM) 1.5 global and 25.7% 1-sun, AM0. These values represent the highest efficiencies achieved by any solar cell under these illumination conditions. Three key areas in this technology are identified and discussed; the grid design, front surface passivation of the top cell, and bottom surface passivation of both cells. Aspects of cell design related to its operation under concentration are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112171
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Surface topography and ordering-variant segregation in GaInP2 (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1774-1776 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using transmission electron diffraction dark-field imaging, atomic force microscopy (AFM), and Nomarski microscopy, we demonstrate a direct connection between surface topography and cation site ordering in GaInP2. We study epilayers grown by organometallic vapor-phase epitaxy on GaAs substrates oriented 2° off (100) towards (110). Nomarski microscopy shows that, as growth proceeds, the surface of ordered material forms faceted structures aligned roughly along [011]. A comparison with the dark-field demonstrates that the [11¯1] and [111¯] ordering variants are segregated into complementary regions corresponding to opposite-facing facets of the surface structures. This observation cannot be rationalized with the obvious but naive model of the surface topography as being due to faceting into low-index planes. However, AFM reveals that the facets are in fact not low-index planes, but rather are tilted 4° from (100) towards (111)B. This observation explains the segregation of the variants: the surface facets act as local (111)B-misoriented growth surfaces which select only one of the two variants.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110658
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Cation site ordering and conduction electron scattering in GaInP2 (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2998-3000 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present Hall mobility data μ(T) in the range T=300–600 K for GaInP2, an alloy whose band gap has been shown to decrease with increasing compositional ordering. Samples grown to give high ordering are found to have consistently lower mobilities than samples with low ordering, suggesting that the mobility is limited by cluster scattering by ordered domains. We analyze μ(T) in terms of a cluster scattering model developed by Marsh [Appl. Phys. Lett. 41, 732 (1982)] and others to estimate the relative volume fraction of cluster scattering sites in the ordered and disordered material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105823
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...