ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Thin film transistors (TFTs) have been produced by rf magnetron sputtering at roomtemperature, using non conventional oxide materials like amorphous indium-zinc-oxide (IZO)semiconductor, for the channel as well as for the drain and source regions. The obtained TFTsoperate in the enhancement mode with threshold voltages of 2.4 V, saturation mobility of 22.7cm2/Vs, gate voltage swing of 0.44 V/dec and an ON/OFF current ratio of 7×107. The highperformances presented by these TFTs associated to a high electron mobility, at least two orders ofmagnitude higher than that of conventional amorphous silicon TFTs and a low threshold voltage,opens new doors for applications in flexible, wearable, disposable portable electronics as well asbattery-powered applications
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/19/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.587-588.348.pdf
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