ISSN:
1432-0630
Keywords:
61.70 Tm
;
61.80 Mk
;
79.20 Nc
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract The simple method of profile combination is shown to be applicable to the simulation of boron profiles in SiO2/Si and Si3N4/Si layered targets. This is demonstrated by comparison with range distributions calculated by more sophisticated theoretical methods, i.e. TRIM Monte Carlo simulations and the algorithm of Christel et al., and with experimental data. The method of profile combination can also be applied to layered targets with a crystalline silicon substrate.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00324457
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