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  • 1
    Electronic Resource
    Electronic Resource
    Time-resolved photoluminescence and steady-state optical investigations of a Zn1−x Cd x Se/ZnSe quantum well (1995)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1435-1440 
    Details
    ISSN: 0392-6737
    Keywords: Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter ; Photoluminescence ; II–VI compounds and other chalcogenides ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary We report on time-integrated and time-resolved optical experiments performed on a 26 Å thick Zn0.85Cd0.15Se/ZnSe quantum well, for temperatures in the 10–200 K range. Excitation spectroscoy allows an estimation of the relative valence band offset, which is found to be 10%. From the temperature variation of the decay time of the photoluminescence performed reasonantly on the e1h1 excitonic transition, we deduce that the main non-radiative mechanism is the heavy-hole thermal escape out of the well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457223
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  • 2
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxy of Hg"1"-"xCd"xTe: Growth and characterization
    Amsterdam : Elsevier
    Progress in Crystal Growth and Characterization of Materials 29 (1994), S. 85-159 
    Details
    ISSN: 0960-8974
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Geosciences , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0960-8974(94)90005-1
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  • 3
    Electronic Resource
    Electronic Resource
    Growth modes and microstructures of ZnO layers deposited by plasma-assisted molecular-beam epitaxy on (0001) sapphire (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5115-5119 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy and high resolution x-ray diffraction are used to characterize defects in ZnO layers grown by plasma-assisted molecular-beam epitaxy on (0001) sapphire. Two- and three-dimensional types of growth modes are described and the observed mosaic structure is analyzed in each case. It is found that two-dimensional layers exhibit a roughness as low as 6 nm. Their subdomains have small lateral coherence lengths and a mean in-plane misorientation of ±0.4°, leading to an important dislocation density of 1–4×1010 cm−2. On the contrary, it is demonstrated that, through numerous interactions between dislocations, the three-dimensional growth mode leads to a better structural quality with a larger lateral coherence length and a smaller in-plane mosaic spread of ±0.07°. The total dislocation density is consequently reduced by 1 order of magnitude down to 3–5×109 cm−2 and the radical modification of the structure results in a change of the dislocation distribution. Our results thus demonstrate that two-dimensional growth mode and low full width at half maximum for symmetric x-ray diffraction are a not reliable indicator of a good structural quality. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1412572
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  • 4
    Electronic Resource
    Electronic Resource
    Photoluminescence from CdTe/Hg1−yCdyTe/Hg1−xCdxTe separate confinement heterostructures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2580-2582 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first observation of photoluminescence from CdTe/Hg1−yCdyTe/Hg1−xCdxTe (y〉x) separate confinement heterostructures grown by molecular beam epitaxy. The spectral shape is determined by the band filling of electrons in the well which is due to a charge transfer effect. There is an appearance of high-energy transitions at high temperatures. The strong photoluminescence from the layer is highly promising for the observation of the laser action.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101055
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  • 5
    Electronic Resource
    Electronic Resource
    Shubnikov–de Haas oscillations on as-grown and annealed molecular-beam-epitaxy-grown Hg1−xCdxTe alloys doped with indium (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 216-225 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transverse resistivity ρxx, longitudinal resistivity ρzz, and Hall resistivity ρxy on heavily indium-doped as-grown and annealed Hg1−xCdxTe (0.24〈x〈34) alloys in a magnetic field up to 12 T and temperature range 1.2–25 K have been measured. The as-grown and annealed samples show good quality Shubnikov–de Haas oscillations in which the effective masses m*, free-electron densities nSdH, and Dingle temperatures TD are extracted. The deduced m* and nSdH from the as-grown and annealed samples are in good agreement within 12%. However, there are considerable improvements in the low field Hall mobility μH (a maximum 54% increase) and a reduction in TD (a maximum 65% decline) in the annealed samples. Analysis at low field seems to indicate that broadening due to an inhomogeneous impurity distribution contributes to TD in addition to the partial cancellation produced by different frequencies of oscillations. An estimate of the average values of an electron density fluctuation Δn/n and its spatial extent ΔL based only on TD and Hall mobility temperature Tμ is presented. The deduced ΔL is in the order of mean free path l. This, therefore, can limit μH and the values of l and ΔL and this indicates that if there is an inhomogeneous distribution of indium donor, high-temperature annealing tends to homogenize the distribution of indium donors by diffusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353885
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  • 6
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxial growth of CdTe and HgCdTe on Si (100) (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1879-1881 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdTe has been grown on Si(100) by molecular beam epitaxy. Two orientations can be obtained: (111)B CdTe when the CdTe is deposited directly on the Si(100) substrates, and (100)CdTe when an intermediate layer of ZnTe is grown first. The (111)B oriented layers are made of two domains which are rotated by 90°. A layer with only one domain can be grown on Si(100) misoriented by 8°, but the best misorientation for this purpose still needs to be found. These layers were characterized by reflection high-energy electron diffraction, photoluminescence spectroscopy, scanning electron microscopy, and x-ray diffraction. Hg1−xCdxTe has also been grown by molecular beam epitaxy on (111)B CdTe on Si(100).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102159
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  • 7
    Electronic Resource
    Electronic Resource
    Stimulated emission from a Hg1−xCdxTe epilayer grown by molecular beam epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1285-1286 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the observation of stimulated emission from a (100) oriented Hg1−xCdxTe epilayer grown by molecular beam epitaxy. The cleaved epilayers were cooled and optically pumped by a Nd:YAG laser and were found to lase continuously up to 40 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101633
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  • 8
    Electronic Resource
    Electronic Resource
    Role of the crystallographic orientation on the incorporation of indium in HgCdTe epilayers grown by molecular beam epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 954-956 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In-doped HgCdTe films have been grown by molecular beam epitaxy (MBE) on CdTe substrates in the (100) crystallographic orientation. They were characterized by Hall and secondary-ion mass spectroscopy measurements. The results are compared with those of In-doped HgCdTe layers grown in the (111)B orientation. In the (111)B orientation indium is incorporated in the metal site whereas in the (100) orientation it appears that indium is mainly incorporated interstitially. The results agree with a Te antisite model as a possibility for explaining the electrical behavior of (100) HgCdTe grown by MBE.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101734
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  • 9
    Electronic Resource
    Electronic Resource
    Deep level photoluminescence spectroscopy of CdTe epitaxial layer surfaces (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1266-1268 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used deep level photoluminescence spectroscopy to investigate the surface electronic quality of molecular beam epitaxy (MBE) grown CdTe layers during ultrahigh vacuum cleaning. Spectra are highly sensitive to heat treatment, contamination, and electron beam exposure. The technique provides a guide to growth and cleaning of MBE films of optimal electronic quality, which exhibit intense near-band-edge and minimal deep level emission and which exceed substantially the electronic quality of bulk CdTe crystals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102532
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  • 10
    Electronic Resource
    Electronic Resource
    Hall electron density and mobility in HgCdTe alloys with anomalous behavior of the Hall coefficient in weak magnetic field (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1096-1099 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is difficult to extract unique values of the Hall electron density, nH, and Hall mobility, μH, in indium-doped Hg1−xCdxTe alloys usually in a region of weak magnetic fields where the Hall coefficient RH behaves anomalously. Since this is also the field region where the weak magnetic field condition of semiclassical transport equations is valid, derivatives of Hall resistivity ρxy(B) and the ratio (Hall angle) of ρxy(B) and transverse resistivity ρxx(B) with respect to the field are used to determine unique values of the weak magnetic field nH and μH. This analysis reduces to calculating the slopes of ρxy(B) and ρxy(B)/ρxx(B) in the region of weak magnetic fields where linearity is observed. The conductivity, σ0, determined from the ratio of the slopes is compared to the zero magnetic-field experimental value. The conductivities agree to within 10%, indicating that nH is constant in contrast to the RH result. The values of nH determined from the slopes are in very good agreement with the values of nH determined from a high magnetic field RH and from the period of Shubnikov–de Haas oscillations in heavily doped alloys.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354958
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