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  • 1
    Electronic Resource
    Electronic Resource
    Increased effective barrier heights in Schottky diodes by molecular-beam epitaxy of CoSi2 and Ga-doped Si on Si(111) (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4082-4085 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Increasing the effective Schottky-barrier height of epitaxial CoSi2/Si(111) diodes by the use of thin, highly doped Si layers in close proximity to the metal-semiconductor interface has been studied. Intrinsic Si, Si doped by coevaporation of Ga, and epitaxial CoSi2 layers have all been grown in the same molecular-beam epitaxy system. Current-voltage and photoresponse characterization yield barrier heights ranging from 0.61 eV for a sample with no p+ layer to 0.89 eV for a sample with a 20-nm-thick p+ layer. These results are compared to theoretical values based on a one-dimensional solution of Poisson's equation under the depletion approximation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341315
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  • 2
    Electronic Resource
    Electronic Resource
    Growth of single-crystal columns of CoSi2 embedded in epitaxial Si on Si(111) by molecular beam epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 247-249 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The codeposition of Si and Co on a heated Si(111) substrate is found to result in epitaxial columns of CoSi2 if the Si:Co ratio is greater than approximately 3:1. These columns are surrounded by a Si matrix which shows bulk-like crystalline quality based on transmission electron microscopy and ion channeling. This phenomenon has been studied as functions of substrate temperature and Si:Co ratio. Samples with columns ranging in average diameter from approximately 25 to 130 nm have been produced.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102383
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  • 3
    Electronic Resource
    Electronic Resource
    Co diffusion and growth of buried single-crystal CoSi2 in Si(111) by endotaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1874-1878 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: At a growth temperature of 800 °C, Co deposited on a Si capping layer exhibits oriented growth on buried CoSi2 grains on Si(111), a process referred to as endotaxy. This occurs preferentially to surface nucleation of CoSi2, provided the thickness of the Si cap is less than a critical value of ≈100 nm for deposition rates of 0.003–0.01 nm/s. The steady-state process is modeled using known values of the Co diffusion coefficient and solid solubility in Si, allowing some conclusions to be drawn regarding parameters relevant to CoSi2 epitaxy. Using this technique, single-crystal continuous layers of CoSi2 can be formed under a high-quality Si capping layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351660
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  • 4
    Electronic Resource
    Electronic Resource
    Response to "Comment on ‘Diffusion of Si in thin CoSi2 layers' '' [Appl. Phys. Lett. 55, 1804 (1989)] (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1804-1805 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102325
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  • 5
    Electronic Resource
    Electronic Resource
    Diffusion of Si in thin CoSi2 layers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1314-1316 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present evidence of Si diffusion in 100 A(ring) layers of CoSi2 grown by room-temperature codeposition and annealing on Si(111) substrates. By monitoring the intensity of the Co MVV and Si LVV Auger peaks, we find a Si-rich surface layer after annealing, in agreement with the results of others. We find that this layer can be removed by chemical etching and re-formed by subsequent annealing. By measuring the intensity of the plasmon energy loss peak associated with the Co L23 VV Auger peak, we conclude that the Si must exist on top of the CoSi2 and we obtain the effective Si overlayer thickness as a function of annealing temperature by calibrating the plasmon loss data against known overlayer thicknesses on unannealed samples. We find similar results on samples grown both with and without the addition of a 10 A(ring) Si cap to prevent pinhole formation in the CoSi2 and we have indications that the same type of diffusion occurs also beneath the native oxide layer on samples that have not had the surface Si removed by chemical etching. In all of the samples studied, Si diffusion was observed to be non-negligible at temperatures on the order of 400 °C, which is well below the point where pinhole formation is first observed. This result suggests that the diffusion does not depend on the presence of observable pinholes as previously thought.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101399
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  • 6
    Electronic Resource
    Electronic Resource
    Optical properties of epitaxial CoSi2 and NiSi2 films on silicon (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2738-2741 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the optical constants of epitaxial films of CoSi2 and NiSi2, grown by molecular beam epitaxy on Si(111), in the energy range of 0.9–4.0 eV. The behavior of the optical constants is characteristic of metals: Drudelike in the low energy region and deviating from Drude behavior as interband transitions set in. Interband transitions are found to have already set in at 1 eV. The absorption varies significantly with energy, which has implications for photoresponse studies of internal photoemission in these material systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344217
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  • 7
    Electronic Resource
    Electronic Resource
    Heteroepitaxy of semiconductor-on-insulator structures: Si and Ge on CaF2/Si(111) (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3886-3894 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si and Ge layers have been grown on CaF2/Si(111) by molecular-beam epitaxy. Both Ge and Si grow as islands, and both the island size and the spacing between nucleation sites are considerably larger for Ge (∼300 nm) than for Si (∼100 nm). In addition, Ge and Si layers are found to be a mixture of type-A (aligned with the underlying CaF2) and type-B (rotated 180° about the surface normal with respect to the underlying CaF2) regions. The crystalline quality and surface morphology of the Ge layers are much better than those of the Si layers. This is thought to be due to the larger island size of the Ge deposits and to a greater ease of movement of the boundaries between type-A and type-B regions in Ge. Hall measurements show electron mobilities of up to 664 cm2/V s in Si layers and hole mobilities of 234 cm2/V s for Ge layers. Finally, the use of a GexSi1−x-Si superlattice, when grown on a GexSi1−x buffer layer which is lattice matched to the CaF2 at the growth temperature, is shown to improve Si heteroepitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337561
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  • 8
    Electronic Resource
    Electronic Resource
    Epitaxial growth and characterization of CaF2 on Si (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 302-308 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CaF2 films have been grown epitaxially on (100) and (111) Si substrates by molecular beam epitaxy. These films have been characterized by electron microscopy, reflection high-energy electron diffraction, Rutherford backscattering ion channeling, and back-reflection Laue x-ray diffraction. In addition, chemical etching has been used to reveal dislocations and to delineate cracks. Film cracking appears to be related to crystalline perfection through misfit dislocation mobility. It is possible to grow high quality, (xmin=3.0%) single-crystal films on (111) Si which are free of cracks and atomically flat. However, the high free energy of the (100) surface in an ionic fluorite crystal prevents the growth of comparable CaF2 films on the (100) Si surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335676
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  • 9
    Electronic Resource
    Electronic Resource
    Characterization of Si/CoSi2/Si(111) heterostructures using Auger plasmon losses (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3531-3538 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The cobalt LMM Auger spectra are observed to undergo significant shape changes as a function of Si overlayer thickness and annealing temperature in Si/CoSi2 /Si heterostructures prepared by codeposition and solid phase epitaxy on Si(111) substrates. The changes are dominated by strong increases of the bulk plasmon loss intensity and shifts in the plasmon loss energy with increasing Si overlayer thickness. These effects can be used to probe the overlayers with electrons generated in the underlying layers. They are used here to measure the thickness of Si overlayers on CoSi2 . We find a linear relationship between the ratio of the plasmon loss peak associated with the Co-L23 VV Auger peak to the Auger peak itself and the known thickness of deposited Si overlayers for thicknesses up to 30 A(ring). Using this calibration, we monitor island formation in annealed Si/CoSi2 /Si and diffusion of Si in CoSi2 /Si. We deduce the formation of islands in the deposited Si overlayers at temperatures of 550 °C for thicknesses less than 30 A(ring). We observe Si diffusion in CoSi2 /Si at temperatures as low as 400 °C. We measure activation energies of 0.52–0.60 eV for the diffusion, as determined from Arhennius plots of the plasmon/Auger data, and conclude that the diffusion most likely proceeds through residual defects in the CoSi2 .
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342627
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  • 10
    Electronic Resource
    Electronic Resource
    Transmission electron microscopy study of the formation of epitaxial CoSi2/Si (111) by a room-temperature codeposition technique (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 434-436 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co and Si have been codeposited on Si (111) substrates near room temperature in a stoichiometric 1:2 ratio in a molecular beam epitaxy system. Annealing of these deposits yields high-quality single-crystal CoSi2 layers. Transmission electron microscopy has been used to examine as-deposited layers and layers annealed at 300, 500, and 600 °C. Single-crystal epitaxial grains of CoSi2 embedded in a matrix of amorphous Co/Si are observed in as-deposited samples, while the layer is predominantly single-crystal, inhomogeneously strained CoSi2 at 300 °C. At 600 °C, a homogeneously strained single-crystal layer with a high density of pinholes is observed. In contrast to other solid phase epitaxy techniques used to grow CoSi2 on Si (111), no intermediate silicide phases are observed prior to the formation of CoSi2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99434
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