ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We describe a new technique which exploits the ac Hall effect in the characterization of layered semiconductor structures. The method employs laser signals in the presence of a dc magnetic bias field. Upon incidence the polarization of the optical signal is rotated via a Lorentz force due to the ac Hall effect. As such, the reflected waves carry information on the Hall mobility of the charge carriers. The calculations show that ac Hall reflection warrants sufficient intensity to be measured. Our theory is complete in the sense that depth profiling has been explicitly incorporated in the formulation. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.361663
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