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  • 1
    Publication Date: 2018-02-23
    Description: Species of Diaporthe are considered important plant pathogens, saprobes, and endophytes on a wide range of plant hosts. Several species are well-known on grapevines, either as agents of pre- or post-harvest infections, including Phomopsis cane and leaf spot, cane bleaching, swelling arm and trunk cankers. In this study we explore the occurrence, diversity and pathogenicity of Diaporthe spp. associated with Vitis vinifera in major grape production areas of Europe and Israel, focusing on nurseries and vineyards. Surveys were conducted in Croatia, Czech Republic, France, Hungary, Israel, Italy, Spain and the UK. A total of 175 Diaporthe strains were isolated from asymptomatic and symptomatic shoots, branches and trunks. A multi-locus phylogeny was established based on five genomic loci (ITS, tef1, cal, his3 and tub2), and the morphological characters of the isolates were determined. Preliminary pathogenicity tests were performed on green grapevine shoots with representative isolates. The most commonly isolated species were D. eres and D. ampelina. Four new Diaporthe species described here as D. bohemiae, D. celeris, D. hispaniae and D. hungariae were found associated with affected vines. Pathogenicity tests revealed D. baccae, D. celeris, D. hispaniae and D. hungariae as pathogens of grapevines. No symptoms were caused by D. bohemiae. This study represents the first report of D. ambigua and D. baccae on grapevines in Europe. The present study improves our understanding of the species associated with several disease symptoms on V. vinifera plants, and provides useful information for effective disease management.
    Keywords: canker ; multi-locus sequence typing ; pathogenicity ; Vitis
    Repository Name: National Museum of Natural History, Netherlands
    Type: Article / Letter to the editor
    Format: application/pdf
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  • 2
    Publication Date: 2024-01-12
    Description: Species of Diaporthe are considered important plant pathogens, saprobes, and endophytes on a wide range of plant hosts. Several species are well-known on grapevines, either as agents of pre- or post-harvest infections, including Phomopsis cane and leaf spot, cane bleaching, swelling arm and trunk cankers. In this study we explore the occurrence, diversity and pathogenicity of Diaporthe spp. associated with Vitis vinifera in major grape production areas of Europe and Israel, focusing on nurseries and vineyards. Surveys were conducted in Croatia, Czech Republic, France, Hungary, Israel, Italy, Spain and the UK. A total of 175 Diaporthe strains were isolated from asymptomatic and symptomatic shoots, branches and trunks. A multi-locus phylogeny was established based on five genomic loci (ITS, tef1, cal, his3 and tub2), and the morphological characters of the isolates were determined. Preliminary pathogenicity tests were performed on green grapevine shoots with representative isolates. The most commonly isolated species were D. eres and D. ampelina. Four new Diaporthe species described here as D. bohemiae, D. celeris, D. hispaniae and D. hungariae were found associated with affected vines. Pathogenicity tests revealed D. baccae, D. celeris, D. hispaniae and D. hungariae as pathogens of grapevines. No symptoms were caused by D. bohemiae. This study represents the first report of D. ambigua and D. baccae on grapevines in Europe. The present study improves our understanding of the species associated with several disease symptoms on V. vinifera plants, and provides useful information for effective disease management.
    Keywords: canker ; multi-locus sequence typing ; pathogenicity ; Vitis
    Repository Name: National Museum of Natural History, Netherlands
    Type: info:eu-repo/semantics/article
    Format: application/pdf
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7059-7062 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heavily B-doped polycrystalline diamond films ([B](approximately-greater-than)1019 cm−3) are studied by Raman spectroscopy and electron spin resonance. The formation of an impurity band is accompanied by a Fano-type interference for the one-phonon scattering. Bands at 1200 and 500 cm−1 are observed in Raman spectroscopy for concentrations above 1020 cm−3. They are related to maxima in the phonon density of states, and are ascribed to disordered regions or crystalline regions of very small size. The concentration of defects associated with the paramagnetic signal observed around g=2.0030 increases drastically above 1021 B cm−3. The Mott insulator-metal transition is accompanied by the presence of a new paramagnetic signal (g=2.0007 for 2×1020 B cm−3, g=1.9990 for 1021 B cm−3) ascribed to free holes in the impurity band. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6633-6638 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the dark conductivity (field, temperature, and frequency dependence), and the photoconductivity in undoped polycrystalline diamond films. Detailed analysis reveals that either of two alternative models can be invoked to explain all the observed features of the dark conductivity. The first model is a Hill-type hopping conduction involving the presence of discrete acceptor states located at 0.91 eV above the valence band with a density around 1017 cm−3. The second model involves the presence of a band-tail of acceptor states extending about 1 eV above the valence band. In this case, variable range hopping conduction dominates at low fields with a density of states at the Fermi level around 5×1015 cm−3 eV−1, while space charge limited currents dominate at high fields. The states controlling the dark conductivity give rise to photoconduction with a threshold around 0.85 eV and a peak at 1.1 eV. The shape of the photoconductivity spectrum suggests that lattice relaxation (with a Franck-Condon shift around 0.08 eV) occurs at these states. Peaks in the photoconductivity at 1.4 eV and at 1.9 eV give evidence for the presence of deeper states in these films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth rate and the incorporation efficiency of dopants have been studied in the case of chemical vapor deposition of B-doped polycrystalline diamond films. The deposition rate is found to decrease with the addition of diborane in the gas phase. This is correlated with a modification of the plasma chemistry as observed by emission spectroscopy (decrease in the H/H2, CH/H, and C2/H ratios with the addition of diborane). The concentration of boron incorporated in the films is observed to vary with the square of the boron concentration in the gas phase. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3929-3931 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline diamond films have been annealed under O2 at 600 °C, or have been dipped in a H2SO4/CrO3 solution. Both treatments result in the formation of a thin electrically insulating layer at the top of the films. Subsequent metallization results in the formation of a metal/insulator/diamond tunnel diode with a potential barrier for holes of 0.85 eV, and with a Fermi level localized at about 0.45 eV above the diamond valence band.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2264-2266 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Record values for high Hall mobility and for low compensation ratio of boron doped diamond by ion implantation are reported. These are achieved, following the suggestion by Prins, by low dose Boron implantation into cold diamond (−97 °C) and in situ rapid heating (1050 °C for 10 min) and by a further anneal at higher temperature (1450 °C for 10 min). Detailed evaluation of Hall effect data and of the temperature dependence of the resistivity over a wide temperature range (200 to 700 K) prove that this implantation/annealing scheme yields p-type behavior of the implanted layer with the highest hole mobility (385 cm2/V s, at room temperature) and the lowest compensation ratio (0.05) ever reported for diamond doped by ion implantation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 226-228 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Natural IIa diamond was implanted at 90 keV to 1×1015 N+/cm2 and subsequently at 150 keV to 3×1017 Si+/cm2 at a temperature of 900 °C. The structure of the implanted diamond region was investigated by high-resolution cross-sectional transmission electron microscopy, Raman, and infrared absorption spectrometry. A buried layer with crystalline 3C–SiC domains in perfect epitaxial relation to the diamond substrate was detected. Amorphization and graphitization were completely prevented by the elevated temperature during the implantation. Resistance measurements demonstrated low electrical resistivity in the implanted regions. © 2000 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Macromolecules 27 (1994), S. 2345-2347 
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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