Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
78 (1995), S. 6469-6476
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
This paper describes a model that simulates the precipitation kinetics of oxygen and the evolution of the precipitate density in annealed Czochralski-silicon wafers. A discrete rate equation representation combined with Fokker-Planck equations are used to treat precipitation of oxygen and simultaneous formation of bulk stacking faults. This approach allows one to describe both statistical clustering during nucleation and diffusional transport during growth. The model considers explicitly influences of self interstitials and stress on precipitation of oxygen and thus is able to accurately predict the experimental observations published previously. In particular, we compare simulation results of precipitated oxygen concentration in 2-step, 3-step, complementary metal oxide semiconductor type multi-step, and rapid thermal anneals with experimental results taken from the literature and discuss them. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.360532
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