Publication Date:
2014-10-08
Description:
Electrical characteristics of a Co/ TiO x /Co resistive memory device, fabricated by two different methods, are reported. In addition to crystalline TiO 2 layers fabricated via conventional atomic layer deposition (ALD), an alternative method has been examined, where TiO x nanoparticle layers were fabricated via sol-gel. The different devices have shown different hysteresis loops with a unique crossing point for the sol-gel devices. A simple qualitative model is introduced to describe the different current-voltage behaviours by suggesting only one active metal-oxide interface for the ALD devices and two active metal-oxide interfaces for the sol-gel devices. Furthermore, we show that the resistive switching behaviour could be easily tuned by proper interface engineering and that despite having a similar active material, different fabrication methods can lead to dissimilar resistive switching properties.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics
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