ISSN:
1013-9826
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Extensive research has been done on porous silicon (PS) and its applications inoptoelectronics since the discovery of its light emitting properties. Porous silicon technology is alsoused for silicon micro machining. However, porous films can be seriously strained and this oftencauses mechanical curling, fracture and device failures. In the present study an optical apparatusbased on substrate curvature method was developed for intrinsic stress measurement of thin films,which offered a lot of advantages as overall field, non-contact, high precision, nondestructive, easyoperation and quick response. Using the apparatus, the residual stress in porous silicon layersprepared by electrochemical etching was obtained. The residual stresses in the films weredetermined by measuring the curvature of the Si substrate before and after etching. It is found thatthe residual tensile stress tends to increase with the porosity increasing and the doping concentrationof the silicon wafer increasing. The results show that there is a deep connection between the microstructurePS and the residual stress distribution
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/52/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.326-328.223.pdf
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