ISSN:
1432-0630
Keywords:
73.40Q
;
79.60
;
61.70T
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Simultaneous oxygen and nitrogen low-energy ion implantation in silicon single crystals have been used to obtain surface layers of silicon oxynitride. In-depth concentration profiles, measured by XPS, showed all the possible tetrahedral configurations of silicon with the neighboring atoms. The most important feature of these profiles has been found to be the accumulation of a so-called Si3+ state just below the surface and about 20 nm deep. This amphoteric state has interesting properties for impurity passivation or electron trapping.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00615913
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