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  • 1
    Electronic Resource
    Electronic Resource
    Metal In-Diffusion during Fe and Co-Germanidation of Germanium (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 131-133 (Oct. 2007), p. 47-52 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: In this paper, the deep levels occurring in Fe- or Co-germanide Schottky barriers on ntypeGe have been studied by Deep Level Transient Spectroscopy (DLTS). As is shown, no trapshave been found for germanidation temperatures up to 500 oC, suggesting that in both cases nomarked metal in-diffusion takes place during the Rapid Thermal Annealing (RTA) step. Deepacceptor states in the upper half of the Ge band gap and belonging to substitutional Co and Fe canbe detected by DLTS only at higher RTA temperatures (TRTA). For the highest TRTA, deep levelsbelonging to other metal contaminants (Cu) have been observed as well. Simultaneously, the reversecurrent of the Schottky barriers increases with TRTA, while the barrier height is also stronglyaffected
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.131-133.47.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    An off-normal fibre-like texture in thin films on single-crystal substrates (2003)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 426 (2003), S. 641-645 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] In the context of materials science, texture describes the statistical distribution of grain orientations. It is an important characteristic of the microstructure of polycrystalline films, determining various electrical, magnetic and mechanical properties. Three types of texture component are ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/nature02198
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  • 3
    Electronic Resource
    Electronic Resource
    Ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/n-Si Schottky contacts by a HF pretreatment (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3226-3231 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The distribution of Schottky barrier heights over the contact area in Au/n-Si diodes was determined by ballistic electron emission microscopy. For samples on which an aqueous HF pretreatment of the Si substrate was applied, the histogram contains several high barrier Gaussian distribution components. After a short rinse, in de-ionized water or methanol, it was mainly the most important lower Gaussian component which was left. Using additional x-ray photoemission spectroscopy and atomic force microscopy measurements allowed us to propose a model, wherein negatively charged species containing F at the interface, are thought to be responsible for the high barrier Gaussian components. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368475
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  • 4
    Electronic Resource
    Electronic Resource
    CoSi2 formation in the Ti/Co/SiO2/Si system (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 133-140 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cobalt silicide formation has been studied in the presence of a thin, chemically grown interfacial SiO2 and a Ti capping layer. It is found that for ex situ annealing without a capping layer (Co/SiO2/Si system), no silicide is formed. In the presence of a Ti capping layer (Ti/Co/SiO2/Si system), CoSi is formed, followed by CoSi2 at higher temperature. The CoSi formation temperature is dependent on the capping layer thickness. The reaction mechanism has been studied in detail. It is found that the function of the Ti capping layer is twofold: first of all the capping layer protects the silicidation reaction from oxygen contamination. Second, Ti from the cap is able to diffuse through the unreacted Co and to transform the interfacial SiO2 diffusion barrier into a CoxTiyOz diffusion membrane. The CoSi2 layer has a preferential epitaxial orientation with the (100) silicon substrate. The epitaxial quality is dependent on the annealing temperature and the thickness of the Co and Ti layers. It is shown that CoSi2 layers formed from a Ti/Co/SiO2/Si system have a better thermal stability and more ideal electrical characteristics than the polycrystalline CoSi2 formed in the standard Co/Si reaction. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373633
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  • 5
    Electronic Resource
    Electronic Resource
    Formation of epitaxial CoSi2 by a Cr or Mo interlayer: Comparison with a Ti interlayer (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2146-2150 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of Cr and Mo on phase formation and preferential orientation of CoSi2 is reported. Three different regimes are distinguished, depending on the thickness of the interlayer. For a thin interlayer or a capping layer, CoSi forms first, as in the standard Co/Si reaction. The remaining Cr or Mo can be considered as a contaminant that is present in the CoSi layer, causing a delay in CoSi2 nucleation and inducing preferential (220) and (400) nucleation. For interlayers with intermediate thickness, epitaxially (400) oriented CoSi2 is formed. For a thick interlayer, a polycrystalline layer of CrSi2 (or MoSi2) is formed first, followed by CoSi formation on top of the CrSi2. At higher temperatures, the CoSi layer is transformed into a polycrystalline, continuous layer of CoSi2 on top of the CrSi2 or MoSi2 layer, while some grains of CoSi2 are formed underneath the CrSi2. A similar behavior for Ti interlayers is observed, although a much thicker Ti layer is needed before the third regime is reached. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1340598
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  • 6
    Electronic Resource
    Electronic Resource
    CoSi2 formation in the presence of carbon (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1207-1211 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicide formation was studied for Co/C/Si and C/Co/Si bilayers. Phase formation and preferential orientation of the CoSi2 phase is strongly dependent on the C layer thickness. For thin interlayers and capping layers, CoSi2 nucleation is delayed to higher temperature and epitaxially aligned nuclei are formed preferentially. To explain these findings, we propose a model based on heterogeneous nucleation theory: C is present as a contaminant in the CoSi and is able to influence CoSi2 nucleation by enhancing the CoSi grain-boundary cohesion and reducing grain-boundary diffusion. For thicker interlayers (〉1 nm), the carbon acts as a diffusion mediating interlayer, and epitaxial CoSi2 is formed by slow outdiffusion of Co from an amorphous Co–C alloy. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1488243
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  • 7
    Electronic Resource
    Electronic Resource
    Influence of Ti on CoSi2 nucleation (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3170-3172 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Evidence is presented that impurities present in the precursor phase may influence the nucleation of a new phase. In case of the CoSi→CoSi2 transition, it is found that the presence of small amounts of Ti (originating from either a Ti capping layer or interlayer) causes an increase in the CoSi2 nucleation temperature. Moreover, for an increasing amount of Ti, we observed a transition from polycrystalline CoSi2 over preferential (220) orientation towards epitaxial (400) CoSi2. The model that we propose entails a new point of view on the mechanism of Ti interlayer mediated epitaxy. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1325401
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  • 8
    Electronic Resource
    Electronic Resource
    CoSi2 formation in the presence of interfacial silicon oxide (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2930-2932 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Evidence is presented that a reactive capping layer may influence the interfacial reaction in a thin film diffusion system. As a prototype system, we describe the CoSi2 formation in the Ti/Co/SiOx/Si system. We observed that Ti from the capping layer transforms the SiOx diffusion barrier into a CoxTiyOz diffusion membrane, initiating silicide formation. The CoSi2 layer that is formed has a preferential epitaxial orientation. The epitaxial quality is dependent on annealing temperature, Co and Ti thickness. The epitaxial growth may be explained by a combination of Ti-interlayer mediated epitaxy and oxide mediated epitaxy. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123969
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  • 9
    Electronic Resource
    Electronic Resource
    Texture in Thin Films (2005)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 495-497 (Sept. 2005), p. 1333-1342 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/11/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.495-497.1333.pdf
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  • 10
    Electronic Resource
    Electronic Resource
    Defect Characterization of the Structure-Growth Zone-Model for Sputter Deposited Cu Films (2004)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 445-446 (Jan. 2004), p. 69-71 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/07/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.445-446.69.pdf
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