ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
To devise a means of circumventing the cost of thick SiC epitaxy to generate drift layersin PiN diodes for 〉10kV operation, we have endeavored to enhance the minority carrier lifetimes inbulk-grown substrates. In this paper, we discuss the results of a process that has been developed toenhance minority carrier lifetimes to in excess of 30 μs in bulk-grown 4H-SiC substrates.Measurement of lifetimes was principally conducted using microwave-photoconductive decay(MPCD). Confirmation of the MPCD lifetime result was obtained by electron beam inducedcurrent (EBIC) measurements. Additionally, deep level transient spectroscopic analysis of samplessubjected to this process suggests that a significant reduction of deep level defects in general and ofZ1/Z2, specifically, may account for the significantly enhanced lifetimes. Finally, a study ofoperational performance in devices employing drift layers fabricated from substrates produced bythis process confirmed ambipolar lifetimes in the microsecond range
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.31.pdf
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