ISSN:
1432-0630
Keywords:
PACS: 44.50.+f; 44.30.+v; 65.90.+i
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
y Ga1-yAs alloys grown by liquid phase epitaxy on GaAs substrates, by means of the open photoacoustic cell detection technique and the temperature-rise method under continuous light illumination. The values of the thermal conductivity, diffusivity and specific heat were obtained in the 0〈y〈0.5 region, where the AlyGa1-yAs band gap is mainly direct. The technique presented here is based upon an effective sample model which is shown to be suitable for the determination of the thermal properties of two layer semiconductor specimens.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s003390050544
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