Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
69 (1996), S. 3369-3371
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The adsorption of H2S on the GaAs(001)-(4×2) surface has been studied using high-resolution electron energy loss spectroscopy and temperature-programmed desorption. The H2S adsorption is predominantly dissociative at 100 K, producing mercaptan (HS-) and H- species, the latter of which are bonded only to As. After annealing to 700 K, vacant gallium sites, which are available for further sulfur chemisorption, are monitored by post-exposure of atomic hydrogen. Several cycles of H2S exposure and thermal annealing build up more S-Ga bonding on the surface and yield a completely sulfur-saturated layer on which only sulfur is available for post-hydrogenation. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.117262
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