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  • 1
    Electronic Resource
    Electronic Resource
    Photoconductance measurements on InTlSb/InSb/GaAs grown by low-pressure metalorganic chemical vapor deposition (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 460-462 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report infrared photoconductors based on InTlSb/InSb grown by low-pressure metalorganic chemical vapor deposition on semi-insulating GaAs substrates. The photoresponse spectrum extends up to 8 μm at 77 K. The absolute magnitude of the photoresponse is measured as a function of bias. The specific detectivity is estimated to be 3×108 Hz1/2 cm W−1 at 7 μm wavelength.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111129
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  • 2
    Electronic Resource
    Electronic Resource
    Detailed analysis of carrier transport in InAs0.3Sb0.7 layers grown on GaAs substrates by metalorganic chemical-vapor deposition (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5820-5828 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAs0.3Sb0.7 layers with mirrorlike morphology have been grown on GaAs substrates by low-pressure metalorganic chemical vapor deposition. A room-temperature electron Hall mobility of 2×104 cm2/V s has been obtained for a 2-μm-thick layer. Low-temperature resistivity of the layers depended on TMIn flow rate and layer thickness. Hall mobility decreased monotonically with decreasing temperature below 300 K. A 77 K conductivity profile has shown an anomalous increase in the sample conductivity with decreasing thickness except in the near vicinity of the heterointerface. In order to interpret the experimental data, the effects of different scattering mechanisms on carrier mobility have been calculated, and the influences of the lattice mismatch and surface conduction on the Hall measurements have been investigated by applying a three-layer Hall-effect model. Experimental and theoretical results suggest that the combined effects of the dislocations generated by the large lattice mismatch and strong surface inversion may lead to deceptive Hall measurements by reflecting typical n-type behavior for a p-type sample, and the measured carrier concentration may considerably be affected by the surface conduction up to near room temperature. A quantitative analysis of dislocation scattering has shown significant degradation in electron mobility for dislocation densities above 107 cm−2. The effects of dislocation scattering on hole mobility have been found to be less severe. It has also been observed that there is a critical epilayer thickness (∼1 μm) below which the surface electron mobility is limited by dislocation scattering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358395
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  • 3
    Electronic Resource
    Electronic Resource
    Anomalous Hall effect in InSb layers grown by metalorganic chemical vapor deposition on GaAs substrates (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5009-5013 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InSb epitaxial layers have been grown on GaAs substrates by low-pressure metalorganic chemical vapor deposition. A 3.15-μm-thick film yielded an x-ray full width at half maximum of 171 arcsec. A Hall mobility of 76 200 cm2/V s at 240 K and a full width at half maximum of 174 arcsec have been measured for a 4.85-μm-thick epilayer. Measured Hall data have shown anomalous behavior. A decrease in Hall mobility with decreasing temperature has been observed and room-temperature Hall mobility has increased with thickness. In order to explain the anomalous Hall data, and the thickness dependence of the measured parameters, the Hall coefficient and Hall mobility have been simulated using a three-layer model including a surface layer, a bulklike layer, and an interface layer with a high density of defects. Theoretical analysis has shown that anomalous behavior can be attributed to donorlike defects caused by the large lattice mismatch and to a surface layer which dominates the transport in the material at low temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353821
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  • 4
    Electronic Resource
    Electronic Resource
    Characterization of InTlSb/InSb grown by low-pressure metal-organic chemical vapor deposition on a GaAs substrate (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3196-3198 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical properties of InTlSb, a new long wavelength infrared material, are investigated. InTlSb/InSb epilayers grown by low-pressure metal-organic chemical vapor deposition on semi-insulating GaAs substrates were characterized using Auger electron spectroscopy and Fourier transform infrared spectroscopy. Auger electron spectra confirm the presence of thallium. Transmission measurements at 77 K indicate an absorption shift from 5.5 μm for InSb up to 8 μm for InTlSb that is confirmed by photoconductivity measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356121
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  • 5
    Electronic Resource
    Electronic Resource
    YBa2Cu3O7−δ/NdBa2Cu3O7−δ/YBa2Cu3O7−δ edge junctions and SQUIDS (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2288-2290 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: YBa2Cu3O7−δ (YBCO) Josephson junctions in a ramp edge geometry with NdBa2Cu3O7−δ (NBCO) barriers were fabricated by pulsed laser deposition on (100) SrTiO3 substrates. The barrier layer thicknesses were d=100, 200, and 300 A(ring) . The I–V characteristics of YBCO/NBCO/YBCO junctions changed from the resistively shunted junction type to flux-creeplike behavior as temperature decreased. Shapiro steps due to the ac Josephson effect clearly developed under microwave irradiation. The interface between the superconducting (YBCO) and the normal layer (NBCO) turned out to be fairly clean with small interface resistance. The mean value of the measured IcRn product for junctions with 100-A(ring)-thick barriers was 71±34 μV at 77 K. The normal coherence length of the NBCO barrier material was ∼40 A(ring). The SQUIDs, made of superconductor–normal metal–superconductor junctions, showed voltage modulation at 77 K. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117536
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  • 6
    Electronic Resource
    Electronic Resource
    Transport properties in n-type InSb films grown by metalorganic chemical vapor deposition (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 964-966 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the temperature and magnetic field dependence of the Hall mobility and transverse magnetoresistance in n-type InSb films epitaxially grown on GaAs substrates by metalorganic chemical vapor deposition. The films show a giant magnetoresistance: e.g., at 240 K the resistivity increases over 20 times at a magnetic field of 5 T; the low field coefficient of resistivity at 77 K is as high as 47.5 μΩ cm/G. The Hall mobility decreases with magnetic field and saturates at higher fields. By taking the interface carrier transport into account, the observed field dependence of the Hall mobility and magnetoresistance may be understood based on a two-layer model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109859
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  • 7
    Electronic Resource
    Electronic Resource
    Growth of In1−xTlxSb, a new infrared material, by low-pressure metalorganic chemical vapor deposition (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 361-363 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the growth of In1−xTlxSb, a new III-V alloy for long-wavelength infrared detector applications, by low-pressure metalorganic chemical vapor deposition. In1−xTlxSb with good surface morphology was obtained on both GaAs and InSb substrates at a growth temperature of 455 °C. X-ray diffraction measurements showed resolved peaks of In1−xTlxSb and InSb films. Infrared absorption spectrum of In1−xTlxSb showed a shift toward lower energies compared to InSb spectrum. Hall mobility data on In1−xTlxSb/InSb/GaAs structure showed enhanced mobility at low temperatures compared to InSb/GaAs structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110043
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  • 8
    Electronic Resource
    Electronic Resource
    The Application of Preconditioning in Viscous Flows
    Amsterdam : Elsevier
    Journal of Computational Physics 105 (1993), S. 207-223 
    Details
    ISSN: 0021-9991
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Computer Science , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1006/jcph.1993.1069
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  • 9
    Electronic Resource
    Electronic Resource
    Agrostistachin, a novel cytotoxic macrocyclic diterpene from agrognstachys hookeri
    Amsterdam : Elsevier
    Tetrahedron Letters 27 (1986), S. 5795-5798 
    Details
    ISSN: 0040-4039
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/S0040-4039(00)85329-0
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  • 10
    Electronic Resource
    Electronic Resource
    Endogenous gibberellin A1 level and α-amylase activity in germinating rice seeds (1996)
    Springer
    Journal of plant growth regulation 15 (1996), S. 147-151 
    Details
    ISSN: 1435-8107
    Keywords: α-Amylase ; Germination ; Gibberellin ; Oryza sativa L
    Source: Springer Online Journal Archives 1860-2000
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract The role of endogenous gibberellin A1 (GA1) in the induction of α-amylase activity was investigated during germination of rice (Oryza sativa L.) seeds. The level of endogenous GA1 and the α-amylase activity in the seeds of normal rice, cv. Nipponbare, increased simultaneously from 3 days after the imbibition of water. The α-amylase activities in the dwarf rice, cv. Waito-C and Tan-ginbozu, were less than that in the normal rice. The level of endogenous GA1 and α-amylase activity were decreased in proportion to the concentration of a growth retardant, uniconazole. The retardation in α-amylase activity caused by the treatment of uniconazole was recovered by the application of exogenous GA1. These results indicate that the endogenous GA1 biosynthesized de novo regulates α-amylase production in germinating rice seeds.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00198930
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