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  • 1
    Electronic Resource
    Electronic Resource
    A thyristor model of switching in metal-thin insulator-semiconductor-semiconductor devices: The influence of insulating layer and illumination (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6447-6452 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of the insulating layer and illumination on the threshold switching voltage (Vs) of metal-thin insulator-semiconductor-semiconductor (MISS) devices has been modeled using the phenomenological approach we developed previously. [J. Appl. Phys. 65, 2102 (1989)]. The influence of the thin insulating layer on Vs has been examined by investigating the influence of the effective barrier heights of the insulating layer on the current amplification factor of the metal-thin insulator-semiconductor part of the model. The influence of illumination is modeled in a similar way to the effect of base current injection in three-terminal devices; the base current is replaced by the photocurrent generated as a result of illumination. Our model provides good agreement for MISS devices with silicon oxide insulating layers and illumination of fixed wavelength.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346842
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  • 2
    Electronic Resource
    Electronic Resource
    Exploratory observations of random telegraphic signals and noise in homogeneous hydrogenated amorphous silicon (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 120-123 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Noise measurements on unhydrogenated and hydrogenated rf sputtered intrinsic amorphous silicon reported by D'Amico, Fortunato, and Van Vliet [Solid-State Electron. 28, 837 (1985)] have 1/f and Lorentzian spectra, respectively. Similar noise measurements on glow-discharge deposited hydrogenated amorphous intrinsic silicon reported by Bathaei and Anderson [Philos. Mag. B 55, 87 (1987)] gave a 1/f m spectrum with 0.7〈m〈1. Even more recently Ley and Arce [Proc. MRS Symposium, San Diego (1989)] have reported random telegraph signals in a-Si@B:H/a-Si1−xNx@B:H double barrier structures. The associated noise was a Lorentzian noise spectrum. In this paper the first observation of random telegraph signals in notionally homogeneous heavily doped (p+) glow-discharged-deposited amorphous silicon is reported. It was found that the current passing through the sample fluctuates between two easily identifiable levels with the periods of fluctuations separated by a quiescent period. The occurrence of these fluctuations is unpredictable but the current noise spectrum obtained during quiescent periods is Lorentzian, probably indicative of a generation-recombination process. Noise measurements are not possible at higher biases (〉105 V/cm) as the current fluctuates chaotically and this is also the prebreakdown regime of the sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347103
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  • 3
    Electronic Resource
    Electronic Resource
    Mapping of the localized interface and surface states of InGaAs lattice matched to Fe-doped InP by infrared spectroscopy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3664-3669 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared absorption and photocurrent measurements have been applied to study the photoresponse below the band gap of indium gallium arsenide (In0.53Ga0.47As) grown lattice matched to Fe-doped semi-insulating indium phosphide (InP) substrates by various epitaxial growth techniques, including molecular beam epitaxy, liquid phase epitaxy, and metalorganic chemical vapor deposition. It is found that Fe at the InGaAs/InP interface is responsible for exciton-like and polarization sensitive absorption peaks. Both electron and hole emission into the conduction and valence bands, respectively, were observed, and a deep Fe level was identified 0.37 eV below the conduction band edge of bulk Fe:InGaAs. Lowering of the local crystal symmetry due to the interface electric field is proposed to be the mechanism that describes the dipole-allowed interband absorption of 3d transition metal impurities in narrow band gap III-V compounds like the Fe2+:InGaAs used in this study. The ambiguity in distinguishing InGaAs quantum well intersubband absorption signals from the Fe interband absorption signals is also addressed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352310
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  • 4
    Electronic Resource
    Electronic Resource
    Rapid thermal oxidation of radio frequency sputtered polycrystalline silicon germanium films (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 2443-2448 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The oxide growth of rf sputtered polycrystalline Si1−xGex films was found not sensitive to the Ge concentration in the films. The infrared results showed that the oxide grown on Si0.61Ge0.39 film mainly contained GeO2 and the oxide contained Ge–O–Ge and Si–O–Ge bonds when grown on Si0.73Ge0.27 film. X-ray photoelectron spectroscopy results showed the absence of Ge in the bulk of the oxides for Si1−xGex films with x〈0.27 and no pile-up of Ge at the SiO2/Si1−xGex interface. The electrical breakdown fields of oxides grown on Si1−xGex films were lower than the oxide breakdown field of polysilicon. The Dit and Qf values of the SiO2/Si1−xGex system were found to be rather high at ∼2.1–2.6×1012 eV−1 cm−2 and ∼1.1–2.7×1012 cm−2, respectively. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1431435
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  • 5
    Electronic Resource
    Electronic Resource
    Structural characterization of rapid thermal oxidized Si1−x−yGexCy alloy films grown by rapid thermal chemical vapor deposition (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 192-197 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural properties of as-grown and rapid thermal oxidized Si1−x−yGexCy epitaxial layers have been examined using a combination of infrared, x-ray photoelectron, x-ray diffraction, secondary ion mass spectroscopy, and Raman spectroscopy techniques. Carbon incorporation into the Si1−x−yGexCy system can lead to compressive or tensile strain in the film. The structural properties of the oxidized Si1−x−yGexCy film depend on the type of strain (i.e., carbon concentration) of the as-prepared film. For compressive or fully compensated films, the oxidation process drastically reduces the carbon content so that the oxidized films closely resemble to Si1−xGex films. For tensile films, two broad regions, one with carbon content higher and the other lower than that required for full strain compensation, coexist in the oxidized films. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371843
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  • 6
    Electronic Resource
    Electronic Resource
    Microstructural characterization of rf sputtered polycrystalline silicon germanium films (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 444-450 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline silicon germanium (Si1−xGex) films deposited by the rf sputtering technique were characterized using a combination of transmission electron microscopy (TEM), atomic force microscopy (AFM), x-ray diffraction (XRD), and Raman spectroscopy techniques. The TEM results showed small grains (10–20 nm) with microtwins, and AFM showed islands of 100–200 nm in the films. The XRD results show that our films consist of Si1−xGex alloy with no cluster of Ge or a Ge-rich material embedded in a Si matrix. The smaller grains in our films could be a result of an abundance of nucleating sites or impurities in the films. Raman spectroscopy results indicate that our films were strain free. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1423388
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  • 7
    Electronic Resource
    Electronic Resource
    Spectroscopic ellipsometry and electrical studies of as-grown and rapid thermal oxidized Si1−x−yGexCy films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5819-5824 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy results showed the formation of SiC precipitation in a rapid thermally oxidized (RTO) Si1−x−yGexCy sample with high-C content. The spectroscopic ellipsometry results showed that the E1 gap increased and E2 gap decreased as the C concentration increased. For the oxidized samples, the amplitude of the E2 transitions reduced rapidly and the E1 transition shifted to a lower energy. The reduction in the E2 transitions was due to the presence of the oxide layer. A high-Ge content layer and the low-C content in the RTO films accounted for the E1 shift to lower energy. The electrical measurements showed that RTO at 800 °C did not improve the oxide quality as compared to 1000 °C. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1413715
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  • 8
    Electronic Resource
    Electronic Resource
    Microstructural and photoluminescence studies of germanium nanocrystals in amorphous silicon oxide films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2168-2172 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ge nanocrystal growth in amorphous silicon oxide film was studied using the transmission electron microscopy and x-ray photoelectron spectroscopy techniques. The as-sputtered sample contained mainly GeO2 and Ge suboxides. GeO2 and/or suboxides dissociate when rapid thermal annealed and provide Ge for nanocrystal formation. Nanocrystals of similar size (∼60 Å in diameter) were obtained when annealed at 800 °C. Nanocrystals with diameters of 200–280 Å consisting of multiple twin structures near the Si–SiO2 interface were observed when annealed at 1000 °C. The twin structure was attributed to the enhanced diffusion of Ge at 1000 °C and the short annealing time. Our photoluminescence (PL) results show that the best PL response was obtained with samples that exhibit uniform nanocrystal size. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1342026
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  • 9
    Electronic Resource
    Electronic Resource
    Raman characterization of germanium nanocrystals in amorphous silicon oxide films synthesized by rapid thermal annealing (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1398-1403 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman characterization of germanium (Ge) nanocrystals embedded in amorphous silicon oxide (a-SiO2) films synthesized by rapid thermal annealing (RTA) has been carried out. The samples were prepared by cosputtering Ge and SiO2 targets using a rf magnetron sputtering machine. Ge nanocrystals can only be obtained from samples sputtered with six pieces of Ge attached to the SiO2 target. For samples annealed at different RTA temperatures, the Raman spectra indicated a transition from amorphous to nanocrystalline Ge when annealed between 600 and 750 °C. The spectra were analyzed in terms of phonon confinement model and the estimated nanocrystal size was between 20 and 66 Å. A minimum annealing time of 160 s at 750 °C was necessary for Ge nanocrystal formation. Strong visible broadband photoluminescence was observed from the nanocrystals and the photoluminescence showed a blueshift with decrease in the nanocrystal size. The effect of compressive stress on nanocrystal growth was examined by varying the rampup and rampdown rates of the RTA process. The compressive stress was shown to affect the growth of the nanocrystals. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370901
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  • 10
    Electronic Resource
    Electronic Resource
    Uniform beam profiles of 5 cm convex gridded ion beam source (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 5379-5380 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A Kaufman-type 5 cm convex gridded ion-beam source is characterized in terms of angle-resolved ion-beam current density and beam uniformity at various discharge currents, electromagnet currents, and acceleration potentials. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146475
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