ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract The accumulation of electrons and holes in GaAs layers that contained As clusters and were sandwiched between n-and p-type buffer GaAs layers was revealed by capacitance-voltage measurements. As a result of majority-carrier accumulation, expansive depletion regions are formed in the adjoining buffer layers. Simulation of the capacitance-voltage characteristics, based on a numerical solution of the Poisson equation, shows that the accumulated charge density is ∼1×1012 cm−2, which is comparable with the concentration of As nanoclusters determined by transmission electron microscopy.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1309425
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