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  • 1
    Electronic Resource
    Electronic Resource
    Three-Dimensional Modeling of Density-Dependent Salt Water Intrusion in Multilayered Coastal Aquifers in Jahe River Baisn, Shandong Province, China (2001)
    Oxford, UK : Blackwell Publishing Ltd
    Ground water 39 (2001), S. 0 
    Details
    ISSN: 1745-6584
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Energy, Environment Protection, Nuclear Power Engineering , Geosciences
    Notes: A three-dimensional variable density flow and transport model has been developed to study salt water intrusion in the Jahe River Basin, Shandong Province, China, A coupled Eulerian-Lagrangian method is applied to solve the transport equation, in which the advection part is calculated by a hybrid method of characteristics. In using the density-dependent tidal effect model, the seaward boundary in the confined apuifer is determined according to tidal-effect information. The aquifer parameters in the Jahe River Basin are estimated by converging long-term observational data of the hydraulic head and chloride concentration. Through numerical analysis and prediction, it can be concluded that the main reasons for salt water intrusion are excessive ground water exploitation and an improper arrangement of pumping wells in the lower reaches of the Jahe River Basin as well as the tidal-affected river. After predicting the effect of several remedial schemes, two measures are suggested to prevent salt water intrusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1745-6584.2001.tb00359.x
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  • 2
    Electronic Resource
    Electronic Resource
    Relationship between the geometry of the excited state of vanadium oxides anchored onto silica and their photoreactivity toward carbon monoxide molecules (1991)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 95 (1991), S. 8813-8818 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100175a072
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  • 3
    Electronic Resource
    Electronic Resource
    Theoretical studies of pulsed photothermal phenomena in semiconductors (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5718-5725 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper presents a thorough theoretical study of pulsed photothermal phenomena in semiconductors. The explicit expressions of the temporal distributions of plasma wave, thermal wave, and displacement field within a finite semiconductor sample, excited by an incidence of the pulsed laser, are derived analytically. We simulate numerically the time evolutions of the pulsed photothermal optical reflectance, the pulsed photothermal optical beam deflection (i.e., Mirage effect), and the pulsed photothermal displacement signals for different characterized parameters of semiconductor samples. The theoretical works are significant to provide a quantitative time- and space-resolved study of dynamic deexcitation processes and characterization of parameters of semiconductor samples under normal experimental conditions by the pulsed photothermal techniques.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354188
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  • 4
    Electronic Resource
    Electronic Resource
    Chemical Solution Deposition of Columnar-Grained Metallic Lanthanum Nitrate Thin Films (2003)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 86 (2003), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Columnar and (100)-oriented LaNiO3 thin films were prepared on silicon substrates by a chemical solution deposition (CSD) process using a 0.05M solution. By reducing the individual layer thickness to 10 nm, columnar LaNiO3 films with a lateral grain size of ∼120 nm were obtained. The success of this approach required restricting the individual layer thickness to a value below the grain size observed for equiaxed films. This change in microstructure resulted in an improvement in conductivity. The columnar LaNiO3 film with a thickness of 300 nm showed a resistivity of 4.5 × 10−5Ω·cm, which is lower by one order of magnitude than that of fine-grain equiaxed films that typically result from CSD methods.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2003.tb03555.x
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  • 5
    Electronic Resource
    Electronic Resource
    Thermoelastic response of pulsed photothermal deformation of thin plates (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 716-722 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theoretical investigation of the dynamic thermoelastic response of pulsed photothermal deformation (PTD) deflection detections for some Q-switch laser pulses and finite thickness samples has been presented. The results show that signals can be characterized by a quasistatic process when the laser pulse rise time is on the order of 1 μs and the sample thickness is in submillimeter range (typically for semiconductor wafers). However, as the pulse rise time decreases or the sample thickness increases, the dynamic wave behavior gradually becomes apparent, and the quasistatic approximation gives only a contour curve of the dynamic time evolution. When the rise time decreases on the order of 10 ns or less for the same kind of the samples, the PTD deflection signal reflects a totally dynamic wave behavior.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357815
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  • 6
    Electronic Resource
    Electronic Resource
    Three-dimensional theory to study photothermal phenomena of semiconductors. II. Modulated photothermal deflection (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7007-7013 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The investigation is further extended to the modulated photothermal deflection (PTD). The three-dimensional Navier–Stokes equation is solved analytically for a layered-structure sample, and then numerical calculations are given. The influences of the optical, thermal, and electronic parameters on the PTD signal are discussed in detail. It is shown that the thermal lens and electronic-strain effects make significant contributions to the PTD signal, but the thermoelastic effect is dominant. The potential applications of the PTD technique to microscopic imaging are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349803
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  • 7
    Electronic Resource
    Electronic Resource
    Nonlinear photoacoustic effect of semiconductors in dc electric field (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3865-3871 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nonlinear piezoelectric photoacoustic (PA) effect of silicon wafers in the applied dc electric field is studied experimentally and theoretically. The apparent nonlinear dependencies of PA amplitude and phase on the laser power are observed in experiments with different dc electric fields. The nonlinearity is explained theoretically by considering the nonlinear surface and bulk Auger recombinations. We present a "subsurface approximation'' method to solve the nonlinear transport equation for photogenerated carriers in semi-infinite samples. A good agreement between the experimental results and theoretical predictions is obtained as the incident laser beam with and/or less than medium power.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346273
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  • 8
    Electronic Resource
    Electronic Resource
    Three-dimensional theory to study photothermal phenomena of semiconductors. I. Modulated optical reflectance (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6999-7006 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A thorough theoretical study of the modulated optical reflectance (MOR) response of semiconductor samples has been presented. The three-dimensional plasma and thermal equations are solved analytically, and then numerical calculations are given for the high-frequency MOR signal. The influences of the optical, thermal, and electronic parameters on the MOR signal are discussed in detail. The generation mechanisms of the MOR signal will be clarified. On the other hand, the mathematical analyses also provide a quantitative tool by which one can fit the theoretical curves to experimental data to determine several material parameters, such as the surface recombination velocity, the lifetime of photogenerated carriers, and thermal conductivity of the materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349802
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  • 9
    Electronic Resource
    Electronic Resource
    Photoacoustic effect of silicon wafers with a p/n junction in the dc electric field (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1088-1093 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The piezoelectric photoacoustic effect of silicon wafers with a p/n junction in the dc electric field is studied experimentally and theoretically. Based on the transport properties of semiconductors, four kinds of thermal wave sources are considered: (i) instantaneous intraband nonradiative thermalization, (ii) interband nonradiative bulk recombination of photogenerated carriers (PGC), (iii) interband nonradiative surface recombination of PGC, and (iv) instantaneous Joule thermalization of PGC in the applied electric field. The theoretical results are in good agreement with those of experiment. Both show that the contribution of the Joule thermalization is a major factor and the photoacoustic signal will be strengthened as the dc electric field increases beyond an appropriate value. Therefore, the signal-to-noise ratio and the contrast of photoacoustic imaging of the semiconductor devices can be improved by the dc external electric field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347158
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  • 10
    Electronic Resource
    Electronic Resource
    Pyroelectric properties in sol–gel derived barium strontium titanate thin films using a highly diluted precursor solution (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1035-1037 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The pyroelectric coefficient and pyroelectric infrared response in the sol–gel derived Ba0.8Sr0.2TiO3 thin films have been studied for possible infrared detector applications. The measured pyroelectric coefficient is larger than 3.1×10−4 C/m2 K at temperatures ranging from 10 to 26 °C and reaches the maximum value of 4.1×10−4 C/m2 K at 16 °C. The infrared detectivity of 4.6×106 cm Hz1/2 W−1 has been obtained at 19 °C and 10 Hz in the Ba0.8Sr0.2TiO3 films deposited on thick (500 μm) platinum coated silicon substrates. The better infrared response can be expected by the improvement in the thermal isolation of pyroelectric element and the electrode materials. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289038
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