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  • 1
    Electronic Resource
    Electronic Resource
    New Methodology for the Synthesis of Furans, Pyrrolidines, and 1,3-Polyols Using Allyl(cyclopentadienyl)iron(II) Dicarbonyl Complexes (1995)
    s.l. : American Chemical Society
    Organometallics 14 (1995), S. 4710-4720 
    Details
    ISSN: 1520-6041
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/om00010a038
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  • 2
    Electronic Resource
    Electronic Resource
    BF3.cntdot.Et2O-Promoted Allylation Reactions of Allyl(cyclopentadienyl)iron(II) Dicarbonyl Complexes with Carbonyl Compounds (1995)
    s.l. : American Chemical Society
    Organometallics 14 (1995), S. 4697-4709 
    Details
    ISSN: 1520-6041
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/om00010a037
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  • 3
    Electronic Resource
    Electronic Resource
    Difficulties with Ti-Ni Powder Metallurgy Process and Multi-Stage Sintering Technique for TiNi SMA (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 539-543 (Mar. 2007), p. 2663-2668 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/15/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.539-543.2663.pdf
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  • 4
    Electronic Resource
    Electronic Resource
    Influence of CaO addition on the electrical properties of BaTiO3 ceramics (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1042-1047 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure and electrical properties of calcium-modified barium titanate ceramics of compositions (Ba1−xCax)TiO3 have been investigated. From the influence of the CaO content and stoichiometry on the said characteristics of the materials, it is concluded that the cationic ratio, α=(Ba+Ca)/Ti, is the predominant factor affecting the resistance of materials against the reducing sintering atmosphere. The electrical properties, including resistivity and dielectric dispersion, can be completely preserved when the sintering atmosphere is switched from air to H2 /N2 , but only for samples with values of α greater than unity. The formation of a hexagonal BaTiO3−δ phase, which consumes the oxygen vacancies, is presumed to be the factor that improves the resistance of these materials against the reducing sintering atmosphere.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345788
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  • 5
    Electronic Resource
    Electronic Resource
    Modification on the electron field emission properties of diamond films: The effect of bias voltage applied in situ (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3890-3894 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, we have systematically examined the effect of bias voltage applied in situ on the characteristics of diamond films. Raman spectroscopic and scanning electron microscopic examinations indicate that the applied positive bias voltage changes the thin films' morphology and the Raman spectroscopy insignificantly, but markedly lowers their effective work function (Φe) and turn-on field (E0). The enhancement of the field emission properties of these films is assumed to result from the introduction of impurity and surface states. By contrast, the negative bias voltage applied during a chemical vapor deposition process leads to pronounced modification of the morphology of diamond films due to an etching effect. Such a process results in a fine granular structure for the diamond films, significantly improving their field emission behavior via the enhancement of field concentration effect. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368568
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  • 6
    Electronic Resource
    Electronic Resource
    Effects of titanium and tantalum adhesion layers on the properties of sol-gel derived SrBi2Ta2O9 thin films (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1511-1517 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of titanium (Ti) and tantalum (Ta) adhesion layers on the ferroelectric and microstructural properties of sol-gel-derived SrBi2Ta2O9 (SBT) films are investigated. It is found that the atoms from the adhesion layer play a significant role in the resultant microstructures and physical properties of SBT films. The electron spectroscopy for chemical analysis clearly indicates that both the Ti and Ta atoms of adhesion layers have out-diffused behavior onto the surface of bottom-electrode Pt films after a thermal treatment of 750 °C, 1 min. Various out-diffused species do cause the distinct properties of SBT films, which are confirmed by the results of surface analysis and polarization-electric field (P-E) measurements. The formation of undesirable second phase compounds near the SBT/PT interface has been observed in specimens with Ti layer, and it is speculated to be the significant degradation of spontaneous polarization. On the contrary, Ta species are found to exhibit the pure bismuth-layered structure (BLS) phase and the good ferroelectric properties of SBT films, which have been identified by x-ray diffraction spectra and P-E measurements. The remnant polarization values of SBT films on top of Pt/Ti/SiO2/Si and Pt/Ta/Ti/SiO2/Si substrates are 11.1 and 14.2 μC/cm2 at 5 V, respectively. The same phenomenon was also observed at specimens with an increased annealing temperature of 800 °C. Consistently, the SBT film with Ta adhesion layer displays a better polarization value of 16.2 μC/cm2 than that with Ti adhesion layer (12.6 μC/cm2). The fatigue tests of all samples depict the near-fatigue-free characteristics except for the specimens with Ti adhesion layer crystallized at 800 °C. It is suggested that the employment of the Ta element for the adhesion layer in the SBT process is more favorable to obtain a desirable BLS phase and to improve the ferroelectric properties. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1492015
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  • 7
    Electronic Resource
    Electronic Resource
    Defect structure and electron field-emission properties of boron-doped diamond films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2857-2859 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The correlation between electron field-emission properties of diamond films prepared by the chemical vapor deposition (CVD) process and the defect structure induced by boron doping was examined. Secondary ion mass spectroscopic analysis indicates that the solubility limit of boron in diamond is (B3+)2=5×1021 cm−3, whereas the infrared absorption (IR) spectroscopic analysis reveals that the largest boron concentration that can be incorporated as substitutional dopants is only one tenth of the solubility limit, (B3+)d=5×1020 cm−3. Including boron species higher than this concentration induces large strain and atomic defects, which are inferred by the distorted Raman resonance peak, noisy IR spectra, and twinned microstructure for diamond. Presumably, the presence of atomic defects, which behave as electron traps, is the mechanism deteriorating the electron field-emission properties of CVD diamonds. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125173
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  • 8
    Electronic Resource
    Electronic Resource
    Effects of tantalum adhesion layer on the properties of SrBi2Ta2O9 ferroelectric thin films (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3833-3835 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of tantalum (Ta) adhesion layer on the ferroelectric and microstructural properties of sol-gel-derived SrBi2Ta2O9 (SBT) films are reported in this study. Compared to the traditional titanium (Ti) adhesion layer, the Ta adhesion layer results in more favorable, highly (115) textural structure of SBT films and therefore higher polarization and dielectric constant. The remnant polarization value of the SBT films crystallized at 750 °C increases from 11.1 to 14.2 μC/cm2 at 5 V, and the dielectric constant increases from 175 to 225. The observed improvement in the electrical properties of SBT films is ascribed to the superior microstructure of Pt thin film on Ta, which has been characterized by x-ray diffraction spectrum (XRD). XRD patterns clearly indicate that the Ti adhesion layer favors c-axis crystalline structure that is undesirable for ferroelectric properties. Moreover, secondary ion mass spectrometer profiles strongly indicate that Ti atoms diffuse deeply into the bulk of SBT thin films after crystallization annealing. By using Ta as the adhesion layer material, this inhomogeneous interdiffusion phenomenon can be effectively suppressed, eliminating the formation of TiOx interfacial layer, and possibly decreasing the occurrence of undesirable second phase compound. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1423405
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  • 9
    Electronic Resource
    Electronic Resource
    Electrical properties of the positive temperature coefficient of resistivity materials with 490 °C critical temperature (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 1321-1326 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work successfully obtains a positive temperature coefficient of resistivity characteristics with critical temperature (Tc) at around 490 and 420 °C for PbTiO3 (PT), and (Pb0.9Sr0.1)TiO3 (PST) materials, respectively. The tetragonality of these materials are (c/a)PT=1.065 and (c/a)PST=1.046. In addition, the donor level of Y3+ ions in PT materials [(Ed)PT=0.09–0.11 eV] is smaller than that in PST materials [i.e., (Ed)PST=0.29–0.40 eV]. The resistivity jumping ratios of the two materials are similar, that is, (ρmax/ρmin)PT≅102.2 and (ρmax/ρmin)PST≅101.6. Multiple-Tc resistivity-temperature (ρ-T) characteristics are observed, that is ascribed to the formation of an incomplete core-shell microstructure with the Pb-deficient shell not entirely surrounding the stoichiometric core. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366832
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  • 10
    Electronic Resource
    Electronic Resource
    Double critical temperature characteristics of semiconducting (Ba0.7Pb0.3)TiO3 materials prepared by microwave sintering (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4553-4559 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, we obtain (Ba0.7Pb0.3)TiO3 materials possessing double critical temperature Tc in resistivity–temperature (ρ–T) behavior by microwave sintering at 1050–1080 °C for 5 min. The cooling-rate control and postannealing processes modify the relative magnitudes of low- and high-Tc resistivity jumps without altering the Tc values. The donor Ed and trap Es levels of those materials are estimated to be Ed(approximately-equal-to)0.05–0.07 eV and Es(approximately-equal-to)1.07–1.32 eV. According to experimental results the voltage sensitivity and transient responsivity of the current passing through double-Tc materials are observed to be superior to those of single-Tc materials prepared by the conventional furnace sintering method. Also, the double-Tc characteristics are attributed to the dual phases with a core-shell structure. Moreover, the change in the relative proportion of the two phases accounts for the influence of post-heat treatment processes on the materials' ρ–T behavior. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363437
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