Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
89 (2001), S. 5322-5325
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Inductively coupled plasma etching of InP in N2/H2 is demonstrated. The dependence of etch rates on N2/H2 composition, radio frequency power and etching pressure is presented. An optimized process is developed and shown to be suitable for the slow, well-controlled, etching of InP-based nanostructures, while yielding excellent surface morphology. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1365942
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