ISSN:
1013-9826
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Chemical vapor deposition (CVD) is one of the various synthesis methods that have beenemployed for CNT growth. In particular, Ren et al reported that large areas of vertically alignedmulti-wall carbon nanotubes could be grown using plasma enhanced chemical vapor deposition(PECVD). In the present study, we synthesized aligned CNT arrays using a direct current (dc)PECVD system. The synthesis of CNTs requires a metal catalyst layer, etchant gas, and a carbonsource. In this study, the substrate consisted of Si wafers with 10, 30, and 50 nm Ni-sputtered film.Ammonia (NH3) and acetylene (C2H2) were used as the etchant gases and carbon source,respectively. NH3 pretreatment was processed using a flow rate of 180 sccm for 10 min. CNTs weregrown on pretreated substrates at 30% C2H2:NH3 flow ratios for 10 min. Carbon nanotubes withdiameters ranging from 60 to 80 nanometers and lengths of about 2.7 μm were obtained. Verticalalignment of the carbon nanotubes was observed by FE-SEM
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/52/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.326-328.333.pdf
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