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  • 1
    Electronic Resource
    Electronic Resource
    Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4449-4455 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Angle-resolved x-ray photoelectron spectroscopy (AR–XPS) is utilized in this work to accurately and nondestructively determine the nitrogen concentration and profile in ultrathin SiOxNy films. With furnace growth at 800–850 °C using nitric oxide (NO) and oxygen, 1013–1015 cm−2 of nitrogen is incorporated in the ultrathin (≤4 nm) oxide films. Additional nitrogen can be incorporated by low energy ion (15N2) implantation. The nitrogen profile and nitrogen chemical bonding states are analyzed as a function of the depth to understand the distribution of nitrogen incorporation during the SiOxNy thermal growth process. AR–XPS is shown to yield accurate nitrogen profiles that agree well with both medium energy ion scattering and secondary ion mass spectrometry analysis. Preferential nitrogen accumulation near the SiOxNy/Si interface is observed with a NO annealing, and nitrogen is shown to bond to both silicon and oxygen in multiple distinct chemical states, whose thermal stability bears implications on the reliability of nitrogen containing SiO2. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373090
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  • 2
    Electronic Resource
    Electronic Resource
    Infrared spectroscopic analysis of the Si/SiO2 interface structure of thermally oxidized silicon (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1322-1330 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nature of the silicon oxide transition region in the vicinity of the Si/SiO2 interface is probed by infrared and x-ray photoelectron spectroscopies. The layer-by-layer composition of the interface is evaluated by uniformly thinning thermal oxide films from 31 Å down to 6 Å. We find that the thickness dependence of the frequencies of the transverse optical and longitudinal optical phonons of the oxide film cannot be reconciled by consideration of simple homogeneous processes such as image charge effects or stress near the interface. Rather, by applying the Bruggeman effective medium approximation, we show that film inhomogeneity in the form of substoichiometric silicon oxide species accounts for the observed spectral changes as the interface is approached. The presence of such substoichiometric oxide species is supported by the thickness dependence of the integrated Si suboxide signal in companion x-ray photoelectron spectra. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372017
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  • 3
    Electronic Resource
    Electronic Resource
    Material and electrical characterization of carbon-doped Ta2O5 films for embedded dynamic random access memory applications (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 308-316 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work is a systematic study of carbon incorporation in Ta2O5 and its effect on the material and electrical properties of Ta2O5, a promising replacement for silicon oxide in embedded dynamic random access memory applications. Using pulsed-dc reactive and rf-magnetron sputtering of Ta2O5 performed in an argon/oxygen/carbon-dioxide plasma, we have methodically doped the Ta2O5 films with carbon. In thick (70 nm) Ta2O5 films, an optimal amount (0.8–1.4 at. %) of carbon doping reduced the leakage current to 10−8 A/cm2 at +3 MV/cm, a four orders of magnitude reduction compared to a leakage current of 10−4 A/cm2 in an undoped Ta2O5 film grown in similar conditions without CO2 in the plasma. This finding suggests that carbon doping can further improve the dielectric leakage property at an optimal concentration. X-ray Photoemission Spectroscopy analysis showed the presence of carbonate (carbon bonded to three oxygen) in these electrically improved carbon-doped films. Analysis by high-resolution transmission electron microscopy and Nomarsky microscopy exhibited no morphological or structural changes in these carbon-doped thin films. Moreover, carbon doping showed no improvement in the leakage current in thin (10 nm) Ta2O5 films. This phenomenon is explained by a defect compensation mechanism in which the carbon-related defects remove carriers at low concentrations but form a hopping conduction path at high concentrations. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1418420
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  • 4
    Electronic Resource
    Electronic Resource
    Thermal stability of Ta2O5 in metal–oxide–metal capacitor structures (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3705-3707 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using x-ray photoelectron spectroscopy and Rutherford backscattering spectrometry, we have studied structures used in metal–oxide–metal capacitors including Ta2O5/TiN/Ti, Ta2O5/Ti, Ta2O5/TaN/Ti, Ta2O5/WN/Ti, and Ta2O5/M, where M=Ta, Pt, W, Al, and Si. We find that Ti and Al are able to reduce the Ta2O5 to Ta, forming oxides of Ti and Al, respectively. The diffusion barriers TiN, TaN, and WN hamper the diffusion of oxygen and therefore postpone the reduction of Ta2O5 to higher temperatures. As judged by the temperatures at which the reduction of Ta2O5 occurs, TaN and WN are more effective oxygen-diffusion barriers than TiN. We observe no oxygen remaining in the diffusion barrier when a Ti layer is present underneath. We observe no reduction of Ta2O5 when M=Pt, W, or Si. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123227
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  • 5
    Electronic Resource
    Electronic Resource
    Dielectric property and conduction mechanism of ultrathin zirconium oxide films (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3666-3668 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Stoichiometric, uniform, amorphous ZrO2 films with an equivalent oxide thickness of ∼1.5 nm and a dielectric constant of ∼18 were deposited by an atomic layer controlled deposition process on silicon for potential applications in metal–oxide–semiconductor (MOS) devices. The conduction mechanism is identified as Schottky emission at low electric fields and as Poole–Frenkel emission at high electric fields. The MOS devices showed low leakage current, small hysteresis (〈50 mV), and low interface state density (∼2×1011 cm−2 eV−1). Microdiffraction and high-resolution transmission electron microscopy showed a localized monoclinic phase of α-ZrO2 and an amorphous interfacial ZrSixOy layer which has a corresponding dielectric constant of 11. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1418265
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  • 6
    Electronic Resource
    Electronic Resource
    Thermal stability of stacked high-k dielectrics on silicon (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3824-3826 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal stability of ZrO2/ZrSixOy and ZrO2/ZrSixOy/SiNx thin films on silicon was examined by synchrotron radiation ultraviolet photoemission spectroscopy. The ZrO2/ZrSixOy layer deposited by atomic-layer-controlled deposition is stoichiometric, uniform, amorphous, and has an equivalent oxide thickness of ∼1 nm and a dielectric constant of ∼18 with low leakage current. These ZrO2/ZrSixOy samples are thermally stable in vacuum up to 880 °C at which the film decomposed to form ZrSi2, the most thermodynamically stable metal silicide at a per zirconium atom basis, and the desorption of SiO(g) and ZrO(g) accounted for the greatly reduced oxygen and zirconium photoemission intensities. The thermal stability of ZrO2/ZrSixOy is improved to 950 °C when deposited on a 0.5–0.7 nm SiNx film. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1419030
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  • 7
    Electronic Resource
    Electronic Resource
    Use of achiral ion-pairing reagents with chiral stationary phases
    Amsterdam : Elsevier
    Journal of Chromatography A 479 (1989), S. 377-386 
    Details
    ISSN: 0021-9673
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/S0021-9673(01)83353-7
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  • 8
    Electronic Resource
    Electronic Resource
    Silica-bound polyethyleneglycol as stationary phase for separation of proteins by high-performance liquid chromatography
    Amsterdam : Elsevier
    Journal of Chromatography A 319 (1985), S. 396-399 
    Details
    ISSN: 0021-9673
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/S0021-9673(01)90578-3
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  • 9
    Electronic Resource
    Electronic Resource
    Contribution of specifiable hydrophobic interactions to chiral recognition
    Amsterdam : Elsevier
    Journal of Chromatography A 598 (1992), S. 1-6 
    Details
    ISSN: 0021-9673
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0021-9673(92)85107-5
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  • 10
    Electronic Resource
    Electronic Resource
    THOROTRAST LOCALIZATION BY LIGHT AND ELECTRON MICROSCOPY (1967)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 145 (1967), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1749-6632.1967.tb50258.x
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