Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
72 (1992), S. 3589-3592
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
This work is a study of the formation of interface traps in Au/n−In0.5Ga0.5P contacts. The effects of heat treatment near the ohmic alloying temperature on the characteristics of the Schottky diodes are studied using current-voltage (I-V), capacitance-voltage (C-V), and deep level transient spectroscopy measurements. New interface states that are distributed around 0.73 eV below the conduction band minimum were generated by heat treatment above 350 °C before metallization. In a sample that was heat treated at 400 °C for 30 min, the maximum density of generated interface states was estimated to be approximately 2×1011 cm−2 eV−1. The origin of these interface states is attributed to the transformation of a phosphorus vacancy that is generated by the vaporization of phosphorus from the surface of In0.5Ga0.5P.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.352297
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