Publication Date:
2013-11-20
Description:
Author(s): F. Mastropietro, J. Eymery, G. Carbone, S. Baudot, F. Andrieu, and V. Favre-Nicolin We report on the quantitative determination of the strain map in a strained silicon-on-insulator line with a 200×70 nm 2 cross section. In order to study a single line as a function of time, we used an x-ray nanobeam with relaxed coherence properties as a compromise between beam size, coherence, and... [Phys. Rev. Lett. 111, 215502] Published Tue Nov 19, 2013
Keywords:
Condensed Matter: Structure, etc.
Print ISSN:
0031-9007
Electronic ISSN:
1079-7114
Topics:
Physics
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