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  • 1
    Electronic Resource
    Electronic Resource
    .alpha.'-Sialon ceramics: a review (1991)
    s.l. : American Chemical Society
    Chemistry of materials 3 (1991), S. 242-252 
    Details
    ISSN: 1520-5002
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/cm00014a009
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  • 2
    Electronic Resource
    Electronic Resource
    Net shape ceramic microcomponents by modified sol–gel casting (2000)
    Springer
    Microsystem technologies 6 (2000), S. 200-204 
    Details
    ISSN: 1432-1858
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Technology
    Notes: Abstract  Development of ceramic microcomponents can open up the current silicon-based MEMS (micro-electro-mechanical systems) technology to new applications, especially for use in high temperature, chemically reactive environments. We report a study of sol–gel technologies applied to the fabrication of microcomponents. Organic/inorganic hybrid materials, particularly silica-based hybrids, were developed by sol–gel processing. A weak silica network was made possible by using acid catalyst, low functionality organic precursor in the sol preparation. Since the weak network has a high tendency to collapse, the result is a denser material. Incorporation of organic ligands modifies the surface chemistry of gel network so that a greater drying stress was developed and a denser hybrid structure was achieved without high temperature treatment. In addition, the incorporation of organic ligands prevented formation of cracks. Nanoscale oxide particles were dispersed and incorporated into the gel network by surface condensation. The incorporation of titania nanoparticles into sols greatly reduced the volume shrinkage of gels and enhanced the mechanical strength of the components. In this work, silica sol was also applied to coat metallic microcomponents and a thin uniform coating was formed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s005420000051
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  • 3
    Electronic Resource
    Electronic Resource
    Growth of {100} textured diamond films by the addition of nitrogen (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1357-1364 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Localized {100} fiber textured diamond films were grown by addition of 20–200 ppm nitrogen into the gas phase during hot-filament chemical-vapor deposition (CVD). Cathodoluminescence indicates the presence of the nitrogen-vacancy system in the {100} textured diamond, whereas a blue "band A'' luminescence is normally observed in diamond films grown without nitrogen addition. The results demonstrate that the nature of the substrates used for growth has no appreciable influence on the {100} texture, which implies that this fiber texture is obtained by competitive growth and selection of facets. The interaction of nitrogen with the {100} surface is a highly important factor in this process. Homoepitaxial growth shows that the addition of a small amount of nitrogen greatly enhances the growth rate of the {100} faces, making 〈100〉 the fastest growth direction in comparison with the 〈110〉 and 〈111〉 directions. This is attributed to breaking of a part of the dimers on the (2×1) reconstructed {100} surface by nitrogen compounds. The {100} texture in narrow, ring-shaped areas on diamond layers grown by the flame technique can also be attributed to the occurrence of a certain amount of nitrogen in the gas phase. It is demonstrated that the flame grown polycrystalline diamond layers have morphologies and cathodoluminescence features that are consistent with those observed in the hot-filament CVD diamond films grown with the addition of nitrogen. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361033
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  • 4
    Electronic Resource
    Electronic Resource
    Homoepitaxial diamond films codoped with phosphorus and nitrogen by chemical-vapor deposition (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3125-3131 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Homoepitaxial diamond films codoped with phosphorus and nitrogen have been grown on natural diamond substrates using phosphine and nitrogen as doping sources by hot-filament chemical-vapor deposition. The experiments show that the incorporation of nitrogen enhances both the phosphorus incorporation and the film growth rate. The former is attributed to the local lattice dilatation caused by nitrogen, while the latter can be explained by defects induced on the surface of diamond by nitrogen or by a change in gaseous composition. The highest concentrations of phosphorus and nitrogen in the epitaxial films are approximately 3×1019 and 6×1019 atoms/cm3, respectively, determined by secondary-ion-mass spectrometry; however, these epilayers are highly resistive. Furthermore, cathodoluminescence and photoluminescence studies show that despite the variety of luminescence features related to nitrogen, no indication of phosphorus induced luminescence is found in the infrared to visible range. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359998
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  • 5
    Electronic Resource
    Electronic Resource
    Dielectric properties of layered perovskite Sr1−xAxBi2Nb2O9 ferroelectrics (A=La, Ca and x=0,0.1) (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2934-2936 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we report an experimental study on the influences of 10 at. % Ca2+ and La3+ doping on dielectric properties and dc conductivity of SrBi2Nb2O9 ferroelectric ceramics. All the samples were made by two-step solid-state reaction sintering at temperatures up to 1150 °C for 0.5–1 h in air. X-ray diffraction analysis indicated that single-phase layered perovskite ferroelectrics were obtained and no appreciable secondary phase was found. The Curie point was found to increase from 418 °C without doping to 475 °C with Ca2+ doping and to 480 °C with La3+ doping. Dielectric constants, loss tangent, and dc conductivity of SrBi2Nb2O9 ferroelectrics doped with Ca2+ and La3+ were studied and the relationships among doping, crystal structure, and dielectric properties were discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126521
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  • 6
    Electronic Resource
    Electronic Resource
    Enhancement of phosphorus incorporation and growth rate of epitaxial diamond films by the addition of nitrogen (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 688-690 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of the addition of nitrogen on the phosphorus incorporation into and the growth rate of epitaxial diamond films grown by hot filament chemical vapor deposition, using a solid compound (NH4H2PO4) as a doping source, was investigated. Experiments show that the introduction of nitrogen gas into the system increases both the segregation of phosphorus in the epitaxial diamond and the film growth rate. The enhancement of phosphorus incorporation was attributed to the local lattice dilatation caused by a significant level of nitrogen dopant, while the increase of growth rate was explained by a model for defect-induced stabilization of diamond. From the secondary ion mass spectrometry analysis, it was found that the effective incorporation efficiency of nitrogen in diamond is about 9×10−4. For phosphorus it can reach a value as high as approximately 1×10−3 when a large amount of nitrogen is introduced simultaneously to the system. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114100
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  • 7
    Electronic Resource
    Electronic Resource
    Electrical conductivity and oxygen semipermeability of terbia and yttria stabilized zirconia (1994)
    Springer
    Journal of applied electrochemistry 24 (1994), S. 1222-1227 
    Details
    ISSN: 1572-8838
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Electrical Engineering, Measurement and Control Technology
    Notes: Abstract This paper reports an electrochemical study on terbia and yttria stabilized zirconia. (Tb, Y)-ZrO2 solid solutions with a fluorite type structure were prepared by using citrate synthesis and sintered at 1500°C. They are mixed electronic and oxygen ionic conductive, as well as oxygen semipermeable materials at elevated temperatures. The total electrical conductivity reaches 3.8 S m−1 at 900°C and the oxygen permeation is about 6.5 × 10−6 mol m−2 s−1 at 1100°C. The electrical conductivity of zirconia doped with a total of 30 mol % of terbia and yttria increases with oxygen partial pressure when P O 2 is below 10−2 atm, and decreases as the oxygen partial pressure rises above 10−2 atm. This is ascribed to the defect association and the predomination of oxygen ionic conductivity. The oxygen semipermeation is proportional to the square root of the oxygen partial pressure, and is not influenced by the variation of oxygen ionic or electronic conduction. The results indicate that the surface exchange reaction is most probably the rate limiting step for the oxygen semipermeation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00249885
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  • 8
    Electronic Resource
    Electronic Resource
    Wear and friction of Y-TZP spheres reciprocating against various sialon plates (1993)
    Springer
    Journal of materials science 28 (1993), S. 3187-3196 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The friction and wear characteristics of various Y-TZP-sialon sliding systems were examined. These systems consisted of a Y-TZP sphere reciprocating against various sialon plates. The sialons differed in phase content and composition. They range from α-sialons to β-sialons and include α-β composites. The length of the wear tracks was 10 mm, the loads used were 2 and 8 N, the frequencies 1, 4 and 8 Hz and the humidity was controlled by flushing with dry nitrogen. The tests were continued for 8, 24 and 72 h at room temperature. The total vertical displacement and the friction coefficient were measured continuously and sampled. Various additional measurements were performed after each test and the worn surfaces were observed microscopically. It was concluded that the α-β composites show less wear than the α- and β-sialons. It was also concluded that the amount of wear increases approximately linearly with load and increases significantly more than linearly with frequency. A wear mechanism was derived incorporating the measured data and the observations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00354235
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  • 9
    Electronic Resource
    Electronic Resource
    Effects of the characteristics of silicon nitride powders on the preparation of α′-sialon ceramics (1992)
    Springer
    Journal of materials science 11 (1992), S. 1685-1686 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00736208
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  • 10
    Electronic Resource
    Electronic Resource
    Neutron diffraction study of yttrium α'-sialon (1993)
    Springer
    Journal of materials science 12 (1993), S. 459-460 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00452793
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