ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The nucleation and expansion of Shockley stacking faults (SSFs) in 4H-SiC is known toinduce an increase in the forward voltage drop (Vf) of bipolar devices such as pin diodes. However,recent annealing experiments have shown that SSFs can not only expand, but that low temperatureannealing (210-7000C) induces a contraction of the SSFs that is coupled with a full and repeatablerecovery of the Vf drift. Here we report that following extended periods of forward bias operation thatthe Vf drift of 10kV 4H-SiC pin diodes saturates, with the saturation Vf drift dropping with increasingstressing temperature. Upon reaching saturation, increases in temperature during forward biasoperation at the same injection conditions also lead to a partial recovery of the Vf drift. Furthermore,the magnitude of this current-induced recovery is dependent upon the injection current, as reductionsin the current cause a slower, but larger overall Vf drift recovery. All of these results clearly indicatethat the current driving force models for SSF expansion are either incomplete or incorrect and thatfurther efforts are required for a more complete understanding of SSF dynamics to be obtained
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.273.pdf
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