ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
This paper reports recent progress in the development of high power 4H-SiC BJTs basedon an improved device design and fabrication scheme. Near theoretical limit high blocking voltageof VCEO=1,836 V has been achieved for 4H-SiC BJTs based on a drift layer of only 12 μm, doped to6.7x1015 cm-3. The collector current measured for a single cell BJT with an active area of 0.61 mm2is up to IC=9.87 A (JC=1618 A/cm2). The collector current is 7.64 A (JC=1252 A/cm2) at VCE=5.9 Vin the saturation region, corresponding to an absolute specific on-resistance (RSP_ON) of 4.7 m9·cm2.From VCE=2.4 V to VCE= 5.8 V, the BJT has a differential RSP_ON of only 3.9 m9·cm2. The currentgain is about 8.8 at Ic=5.3 A (869 A/cm2). This 4H-SiC BJT shows a V2/RSP_ON of 717 MW/cm2,which is the highest value reported to date for high-voltage and high-current 4H-SiC BJTs. A verylargearea 4H-SiC BJT with an active area of 11.3 mm2 is also demonstrated
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1417.pdf
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