ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The new MOSFET-generation with SiC-materials seems well suited for power electronicconverters up to 1200 V operating-voltage, and particularly for grid-feeding PhotoVoltaic-inverters,which transfer the DC power of the solar panel to the AC grid. Their high switching speed and lowon-resistance RDS(on) allow the use of higher switching frequencies, which could mainly reduce thecosts and weight of the converters. This paper shows a comparison between IGBT and SiCDMOSFET devices and first measurements of some 1200 V / 10 A SiC-DMOSFET samples madeby CREE®
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1231.pdf
Permalink