ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract The isotypic heterojunctions p-AlxGa1−x As/p-AlyGa1−y As, grown by MOVPE on n-GaAs substrates, have been investigated by the voltage-capacitance method at temperatures ranging from 300 to 100 K. To determine the valence-band offset ΔE V and the built-in charge in the heterojunction, the Poisson equation was solved numerically on a nonuniform coordinate grid. The incomplete ionization of the acceptors and the different magnitude of the permittivity in different layers of the heterostructure were taken into account in the calculation. It was found that for a p-Al 0.2 a0.8As/p-Al 0.5 Ga0.5As heterojunction ΔE V at room temperature is 39% (113 meV) of the total gap ΔE g and decreases monotonically to 35% at T=120 K.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187798
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