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  • 1
    Electronic Resource
    Electronic Resource
    Scattering and recoiling analysis of oxygen adsorption site on the Ir{110}-c(2×2)-O surface (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 2882-2889 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The oxygen adsorption site on the Ir{110}-c(2×2)-O surface has been studied by time-of-flight scattering and recoiling spectrometry (TOF-SARS) using 4 keV Ne+ for backscattering and Ar+ for recoiling. The oxygen site was analyzed from scans of (i) backscattering intensity versus incident angle, (ii) oxygen recoil intensity versus incident and azimuthal angle, and (iii) oxygen recoil energy versus azimuthal angle. Calibrated shadow cones and trajectory simulations were used to obtain the site coordinates. This TOF-SARS data is contrasted with that of Ni{110}-p(2×1)-O, in which it is well established that the adsorption site is in the long-bridge position along the 〈001〉 rows. Adsorption of oxygen in the short-bridge sites above the 〈11¯0〉 Ir rows is the only model consistent with all of the experimental data and simulations. The O–Ir bond length is estimated to be ≈1.8 A(ring).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.460890
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  • 2
    Electronic Resource
    Electronic Resource
    Sulfur inhibition of the oxygen-induced reconstruction of the Ni{110} surface
    Amsterdam : Elsevier
    Chemical Physics Letters 200 (1992), S. 60-64 
    Details
    ISSN: 0009-2614
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0009-2614(92)87045-Q
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  • 3
    Electronic Resource
    Electronic Resource
    Study of skeletal vibrations used to compute heat capacities of solid macromolecules (1987)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 91 (1987), S. 4179-4188 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100299a046
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  • 4
    Electronic Resource
    Electronic Resource
    Orientation of single crystalline paraffin thin films from time-of-flight direct recoil spectrometry (1993)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 97 (1993), S. 13788-13791 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100153a057
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  • 5
    Electronic Resource
    Electronic Resource
    Oxygen induced added-row reconstruction of the Ni{110} surface (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 1465-1470 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The oxygen induced reconstructed phases of the Ni{110} surface have been studied by time-of-flight scattering and recoiling spectrometry (TOF–SARS). The substrate structures are determined from experimental measurements of azimuthal angle (δ) and polar incident angle (α) anisotropies in the scattered Ne intensities coupled with classical trajectory simulations for shadow cone analysis. By monitoring features in the TOF–SARS scans that are unique to specific phases, it is possible to follow the migration of the first-layer Ni atoms as a function of O2 exposure. The results show that upon increasing exposures of the clean Ni{110}–(1×1) surface to O2, a series of LEED patterns [initial p(3×1), p(2×1), and final p(3×1)] is produced corresponding to three surface phases which differ only in the density of the first-layer Ni 〈001〉 rows. These nascent "added rows'' are stabilized by bonding to oxygen atoms which reside in the long-bridge positions along the 〈001〉 rows. Structural models for the three phases are confirmed from the TOF–SARS data and the inhibiting effects of carbon and sulfur impurities on the reconstruction is considered.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.463222
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  • 6
    Electronic Resource
    Electronic Resource
    Structure of benzene and phenol chemisorbed on Ni{110} (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 5855-5862 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The chemisorption of benzene and phenol on a clean Ni{110}–(1×1) surface and an oxygen predosed Ni{110}–(3×1)–O surface near room temperature has been investigated by time-of-flight scattering and recoiling spectrometry accompanied by shadow cone calculations. The Ne scattering and H, C, and O recoiling fluxes exhibited strong angular anisotropies as a function of beam incident (α) and crystal azimuthal (δ) angles. These anisotropies are due to C and O atoms shadowing their neighboring atoms within the benzene molecules and resulting phenoxide species, demonstrating that scattering and recoiling spectrometry is capable of providing structural information on polyatomic molecular systems. The results show that both benzene and phenoxide are chemisorbed as molecules which have very good short-range order despite the absence of long-range order observable by low energy electron diffraction. Both benzene and phenoxide are oriented nearly parallel to the surface, with a maximum inclination angle of 15°. The C atoms in the para positions of benzene and the C–O bond in phenoxide are oriented along the 〈001(approximately-greater-than) azimuth. The C–H bond is bent out of the plane of the hexagonal ring so that the H atoms are above the C atom plane. Chemisorption on the oxygen predosed surface results in a reaction in which a H atom is abstracted from both benzene and phenol with the formation of surface hydroxide groups; the molecules remain well ordered on this surface also.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.464877
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  • 7
    Electronic Resource
    Electronic Resource
    Time-of-flight scattering and recoiling spectrometer (TOF-SARS) for surface analysis (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 740-752 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A UHV spectrometer system has been designed and constructed for time-of-flight scattering and recoiling spectrometry (TOF-SARS). The technique uses a pulsed primary ion beam and TOF methods for analysis of both scattered and recoiled neutrals (N) and ions (I) simultaneously with continuous scattering angle variation over a flight path of ≈1 m. The pulsed ion beam line uses an electron impact ionization source with acceleration up to 5 keV; pulse widths down to 20 ns with average current densities of 0.05–5.0 nA/mm2 have been obtained. Typical current densities used herein are ≈0.1 nA/mm2 and TOF spectra can be collected with a total ion dose of 〈10−3 ions/surface atom. A channel electron multiplier detector, which is sensitive to both ions and fast neutrals, is mounted on a long tube connected to a precision rotary motion feedthru, allowing continuous rotation over a scattering angular range 0°〈θ〈165°. The sample is mounted on a precision manipulator, allowing azimuthal δ and incident α angle rotation, as well as translation along three orthogonal axes. The system also accommodates standard surface analysis instrumentation for LEED, AES, XPS, and UPS. The capabilities of the system are demonstrated by the following examples: (A) TOF spectra versus scattering angle θ; (B) comparison to LEED and AES; (C) surface and adsorbate structure determinations; (D) monitoring surface roughness; (E) surface semichanneling measurements; (F) measurements of scattered ion fractions; and (G) ion induced Auger electron emission.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141488
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  • 8
    Electronic Resource
    Electronic Resource
    Random telegraph signals and low-frequency noise in n-metal–oxide–semiconductor field-effect transistors with ultranarrow channels (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3259-3261 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The characteristics of low-frequency noise in n-metal–oxide–semiconductor field-effect transistors with ultranarrow channels have been investigated through random telegraph signals and low-frequency noise spectroscopy. Random telegraph signals with very large amplitude (∼70%) are observed in weak inversion at room temperature. Low-frequency noise spectra having both 1/fn and Lorentzian type are found separately in the same channel at various gate bias voltages. The observations strongly suggest that the low-frequency noise is dominated by carrier mobility fluctuation in weak inversion and by carrier number fluctuation under high-field conditions in an ultranarrow channel. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126600
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  • 9
    Electronic Resource
    Electronic Resource
    Studies of metal–ferroelectric–GaN structures (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2416-2417 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A GaN-based metal–insulator–semiconductor (MIS) structure has been fabricated by using ferroelectric Pb(Zr0.53Ti0.47)O3 instead of conventional oxides as insulator gate. Because of the polarization field provided by ferroelectric and the high dielectric constant of ferroelectric insulator, the capacitance–voltage characteristics of GaN-based metal–ferroelectric–semiconductor (MFS) structures are markedly improved compared to those of other previously studied GaN MIS structures. The GaN active layer in MFS structures can reach inversion just under the bias of smaller than 5 V, which is the generally applied voltage used in semiconductor-based integrated circuits. The surface carrier concentration of the GaN layer in the MFS structure is decreased by one order compared with the background carrier concentration. The GaN MFS structures look promising for the practical application of GaN-based field effect transistors. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125032
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  • 10
    Electronic Resource
    Electronic Resource
    Surface and adsorbate structural analysis from time-of-flight scattering and recoiling spectrometry (TOF-SARS)
    Amsterdam : Elsevier
    Nuclear Inst. and Methods in Physics Research, B 64 (1992), S. 559-565 
    Details
    ISSN: 0168-583X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0168-583X(92)95533-W
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