Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
79 (2001), S. 791-793
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
An atomic-force microscope (AFM) is used to locally inject, detect, and quantify the amount and location of charge in SiO2 films containing Si nanocrystals (size ∼2–6 nm). By comparison with control samples, charge trapping is shown to be due to nanocrystals and not ion-implantation-induced defects in samples containing ion-beam-synthesized Si nanocrystals. Using an electrostatic model and AFM images of charge we have estimated the amount of charge injected in a typical experiment to be a few hundred electrons and the discharge rate to be ∼35±15 e/min. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1383574
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