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  • 1
    Electronic Resource
    Electronic Resource
    Electrothermal instabilities induced by a metastable electronic state in PbTe(Ga) (1997)
    Springer
    Semiconductors 31 (1997), S. 100-102 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The electrothermal instabilities in high-resistance single crystals of PbTe(Ga) irradiated by infrared light are described phenomenologically. Instabilities show up in the form of periodic oscillations in the current in the sample circuit and in its temperature in sufficiently high electric fields. For observation of these phenomena it is important that the energy spectrum of the semiconductor contain metastable electronic states lying about 20 meV below the bottom of the conduction band.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187089
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  • 2
    Electronic Resource
    Electronic Resource
    Identification of two populations of cardiac microsomes with nitrendipine receptors: Correlation of the distribution of dihydropyridine receptors with organelle specific markers
    Amsterdam : Elsevier
    Archives of Biochemistry and Biophysics 242 (1985), S. 306-319 
    Details
    ISSN: 0003-9861
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0003-9861(85)90506-5
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  • 3
    Electronic Resource
    Electronic Resource
    Separation of dihydropyridine binding sites from cardiac junctional sarcoplasmic reticulum
    Amsterdam : Elsevier
    Archives of Biochemistry and Biophysics 244 (1986), S. 872-875 
    Details
    ISSN: 0003-9861
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0003-9861(86)90657-0
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  • 4
    Electronic Resource
    Electronic Resource
    The electrophysical properties of silicon nitride at low temperatures (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4566-4570 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conductivity of the metal-silicon nitride-silicon dioxide-semiconductor structure has been studied over a wide range of temperatures, 2–450 K, in a high electric field up to 8 MV/cm and magnetic field up to 70 kG. A strong positive magnetoresistance has been found at temperatures below 30 K. At temperatures of 30〈T〈250 K a weak negative magnetoresistance is observed. The existence of a positive magnetoresistance and its weak dependence on the magnetic field direction concerning that of current through a structure shows a hopping conductivity mechanism for silicon nitride film at temperatures below 30 K. Different hopping conductivity mechanisms in a high electric field have been discussed. The influence of a degradation process at T=4.2 K on the structure's conductivity has been investigated. Qualitative changes in the structure's conductivity during a degradation process have been found.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338959
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  • 5
    Electronic Resource
    Electronic Resource
    Triadic proteins of skeletal muscle (1989)
    Springer
    Journal of bioenergetics and biomembranes 21 (1989), S. 149-162 
    Details
    ISSN: 1573-6881
    Keywords: Triad junctions ; transverse tubule ; junctional foot protein ; glyceraldehyde 3-phosphate dehydrogenase ; dihydropyridine receptor
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology , Physics
    Notes: Abstract Biochemical approaches toward understanding the mechanism of muscle excitation have in recent years been directed to identification and isolation of proteins of the triad junction. The principal protein described—the junctional foot protein (JFP)—was initially identified by morphological criteria and isolated using antibody-affinity chromatography. Subsequently this protein was described as the ryanodine receptor. It has been isolated and incorporated into lipid bilayers as a cation channel. This in its turn has directed attention toward the transverse (T)-tubular junctional constituents. Three approaches employing the JFP as a probe toward identifying these moieties on the T-tubule are described here. The binding of the JFP to the dihydropyridine receptor, which has been hypothesized to be the voltage sensor in excitation-contraction coupling, is also discussed. The detailed architecture and function of T-tubular proteins remain to be resolved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00812067
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  • 6
    Electronic Resource
    Electronic Resource
    Gap at the Fermi level in the intermetallic vacancy system RBiSn(R=Ti,Zr,Hf) (1989)
    Springer
    The European physical journal 75 (1989), S. 167-171 
    Details
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The new class of intermetallic compounds RNiSn(R=Ti,Zr,Hf) may be characterised by the presence of an ordered sublattice of Ni atom vacancies in comparison with normal metals RNi2Sn with no Ni vacancies. We report unusual transport and optical properties of the RNiSn system. The electrical resistivity of RNiSn is very high (3〈p〈100) mOhm*cm; the temperature coefficient of resistivity (TCR) is negative and strongly dependent on the annealing conditions. For some samples ZrNiSn and for a single crystal of TiNiSn the resistivity can be described by the Mott's law at temperatures 0.1〈T〈20 K. A phase transition nearT=100 K without change of crystal structure was deduced from Hall effect data and the temperature dependence of the lattice constant. Preliminary data on transport phenomena in RPtSn and RPdSn(R=Ti,Zr,Hf) compounds are also reported. The unusual properties of RNiSn system might be related to a gap of the electron spectrum near the Fermi energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01307996
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  • 7
    Electronic Resource
    Electronic Resource
    Investigation of the gapless state induced by pressure in Hg1−x Cd x Te alloys (1976)
    Springer
    Journal of low temperature physics 24 (1976), S. 471-490 
    Details
    ISSN: 1573-7357
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We report the results of an experimental study of the gapless state (GS) induced inp-type semimetallic alloys Hg 1−x Cd x Te (0〈x〈0.15) by pressure. Galvanomagnetic effects in weak magnetic fields (2≤T〈300 K) and the Shubnikov-de Haas effect have been investigated in the pressure interval 1≤p〈15 kbar. Direct evidence for the existence inp-type semimetallic alloys of an impurity hole band overlapping with the conduction band by 3–4 me V is obtained. At liquid helium temperatures the Fermi level is located in the impurity band, so that two groups of carriers take part in transport effects: “light” electrons in the conduction band and “heavy” holes in the impurity band. The electron Fermi energyE F is proved to be essentially constant during the transition to the GS. A linear dependence of the electron effective mass at the band edgem* (0) upon the gapE g is obtained. A significant role of scattering of electrons into the impurity band at liquid helium temperatures is revealed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00655271
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  • 8
    Electronic Resource
    Electronic Resource
    Experiment and theory on the magnetic susceptibility of Bi-Sb alloys (1977)
    Springer
    Journal of low temperature physics 27 (1977), S. 75-90 
    Details
    ISSN: 1573-7357
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The magnetic susceptibility of Bi 1−x Sb x alloys is investigated for the concentration range 0 ⩽x≲22 at%, the temperature range 4.2–270 K, and magnetic fields up to 60 kOe. The experimental results are compared with the theoretical dependences of susceptibility on the band parameters, temperature, and magnetic field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00654638
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  • 9
    Electronic Resource
    Electronic Resource
    Electron transitions in strong magnetic fields (1970)
    Springer
    Journal of low temperature physics 2 (1970), S. 1-35 
    Details
    ISSN: 1573-7357
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Various types of electron transitions in strong magnetic fields due to qualitative changes of the energy spectrum of electrons (and hence of properties of materials) were predicted and observed at certain critical values of the magnetic field. Metallic and semiconducting Bi-Sb alloys were investigated in the concentration range of Sb up to 8 at % and from 8 at % to 16 at % correspondingly. The transversal and longitudinal magnetoresistance measurements on Bi-Sb alloy single crystals were performed at various orientations of current and fields relative to the crystalline axes. The measurements were performed in magnetic fields up to 600 kOe.at temperatures from 4.2 to 77°K. The following types of electron transitions were discovered: (a) semiconductor-metal transition; (b) a transition from a semiconducting state into a state with an abnormally small energy gap between the zones referred to as a “quasimetallic”; (c) a transition semiconductor-“quasimetal”-semiconductor; (d) a transition semiconductor-“quasimetal”-semiconductor-metal; and (e) metal-semiconductor transition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00628099
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  • 10
    Electronic Resource
    Electronic Resource
    Band edge motion in quantizing magnetic field and nonequilibrium states in Pb1−x Sn x Te alloys doped with In (1983)
    Springer
    Journal of low temperature physics 51 (1983), S. 9-32 
    Details
    ISSN: 1573-7357
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Galvanomagnetic and oscillation effects in Pb1−x Sn x Te single crystals doped with 0.5 at % In have been studied in magnetic fields up to 60 kOe at temperatures from 4.2 to 30 K under hydrostatic pressure up to 18 kbar. Beyond the ultraquantum magnetic field limit (H uql) for the metallic state of Pb1−x Sn x Te(In) alloys, Fermi level pinning by high-density quasilocal states takes place. In a strong fieldH〉H uql the equationE F = const is valid instead of the equationn = const which is usual for degenerate semiconductors (E F is the electron or hole Fermi energy, andn is their concentration). This makes it possible to determine the direction of the band edge motion in the Pb1−x Sn x Te energy spectrum in a quantizing magnetic field in the direct and inverse spectral regions. It is found that the charge carrier transitions between quasilocal and band states are of anomalously long duration (∼105 sec atT=4.2 K). By the application of a quantizing magnetic field we obtained a nonequilibrium metallic state of the system with a frozen or slowly diminishing Fermi surface. The characteristic time of the transition was found as a function of temperature and pressure. The relaxation kinetics of the nonequilibrium states induced by a quantizing magnetic field and infrared irradiation is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00683411
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