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  • 1
    Electronic Resource
    Electronic Resource
    Magnetic resonance investigations of defects in Ga14N and Ga15N (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3249-3253 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of the nitrogen nuclear spin on the optically detected magnetic resonance and electron spin resonance signatures of the intrinsic shallow donor and a deep defect causing the characteristic yellow luminescence have been studied on wurtzite GaN epitaxial layers grown by plasma induced molecular beam epitaxy with isotopically pure 14N and 15N. In particular, the linewidth of the deep defect signal is observed to be independent of the nitrogen isotope. The missing effect of the different nuclear spin properties of the 14N and 15N isotopes is discussed in view of current microscopic models for the yellow luminescence in GaN. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289226
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  • 2
    Electronic Resource
    Electronic Resource
    Efficient tunable luminescence of SiGe alloy sheet polymers (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3956-3958 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Crystalline SiGe alloy sheet polymers were topotactically prepared from epitaxially grown calcium germanosilicide Ca(Si1−xGex)2 precursor films in the whole composition range. These polygermanosilynes are found to be a well-defined mixture of the known siloxene and polygermyne sheet polymers with the OH groups exclusively bonded to silicon. The optical properties determined by photoluminescence and optical reflection measurements identify the mixed SiGe sheet polymers as direct semiconductors with efficient luminescence tunable in the energy range between 2.4 and 1.3 eV. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1378315
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  • 3
    Electronic Resource
    Electronic Resource
    Generation–recombination noise of DX centers in AlN:Si (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2396-2398 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Generation–recombination noise is observed in Si-doped aluminum nitride (AlN:Si). Both the magnitude and the characteristic frequency of the generation–recombination noise power density are found to be thermally activated. Using a model based on charge carrier number fluctuations in a two-level system, transition energies and potential barriers of the DX center formed by Si donors in AlN are quantitatively determined. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1405426
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  • 4
    Electronic Resource
    Electronic Resource
    Spin-dependent capacitance of silicon field-effect transistors (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1467-1469 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Under electron spin resonance conditions, changes of the capacitance of vertical field-effect transistors are observed, due to spin-dependent trapping of charge carriers by defects at the interface between the substrate and the channel region. The spectra obtained by capacitively detected magnetic resonance show the presence of two different defects, tentatively assigned to defects introduced by processing and complexes involving transition-metal impurities. Using a quantitative model, the number of defects resonantly charged by this trapping is estimated. It is shown that the possible cross talk of spin-dependent changes of the conductivity in the substrate is, in fact, suppressed by the large impedance of the space-charge layer. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126066
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  • 5
    Electronic Resource
    Electronic Resource
    Electrically detected magnetic resonance investigations of gallium phosphide green light-emitting diodes (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4541-4547 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transport processes and degradation of GaP:N green light-emitting diodes have been investigated using electrically detected magnetic resonance (EDMR). An isotropic EDMR signal with a g value of g=1.996 and a linewidth of ΔHpp=68 G can be observed at low temperatures after current degradation. The signal exhibits a T−2 temperature dependence indicating a spin relaxation process faster than the relevant transport step. The microscopic origin of the EDMR signal—most probably recombination at a n-type dopant-related defect near the p–n interface—is analyzed with respect to possible degradation mechanisms. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363435
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  • 6
    Electronic Resource
    Electronic Resource
    Accelerated stability test for amorphous silicon solar cells (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1709-1711 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fast light-induced degradation of amorphous silicon p-i-n solar cells has been investigated by replacing cw illumination by light pulses of the same average intensity. This method allows us to evaluate the long-term device performance with exposure times of the order of minutes and avoids complication due to cell temperature increase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107193
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  • 7
    Electronic Resource
    Electronic Resource
    29Si nuclear magnetic resonance of luminescent silicon (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 188-190 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nuclear magnetic resonance of 29Si is used to study structural properties of porous silicon and siloxene. Evidence for changes in the chemical shift of porous silicon due to quantum confinement could not be observed. A hydride phase exhibiting a chemical shift of −75 ppm versus tetramethyl silane (TMS) is found in both porous silicon and siloxene. In as-prepared Wöhler siloxene, a chemical shift of −83 ppm versus TMS is assigned to threefold coordinated Si atoms forming a planar polysilane. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118199
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  • 8
    Electronic Resource
    Electronic Resource
    Observations on the limits to p-type doping in ZnSe (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1001-1003 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter secondary ion mass spectroscopy measurements of nitrogen concentrations in p-type ZnSe and ZnTe, doped using a nitrogen plasma source with molecular beam epitaxy, are correlated with transport data from the temperature-dependent Hall effect measurements. The results suggest that, at least for the growth conditions employed in this study, the nitrogen acceptor solubility is the controlling factor in determining that the acceptor concentration in ZnTe exceeds that in ZnSe by about one order of magnitude despite the similar growth conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112205
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  • 9
    Electronic Resource
    Electronic Resource
    Hydrogenation of p-type gallium nitride (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2264-2266 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hole concentrations of up to 1019 cm−3 have been reported for GaN:Mg films grown by molecular beam epitaxy without any post-growth treatment. Comparing results from Hall measurements and secondary ion mass spectrometry, we observe doping efficiencies of up to 10% at room temperatures in such p-type material. By hydrogenating at temperatures above 500 °C, the hole concentration can be reduced by an order of magnitude. A new photoluminescence line at 3.35 eV is observed after this treatment, both in p-type and unintentionally doped n-type material, which suggests the introduction of a hydrogen-related donor level in GaN.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111639
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  • 10
    Electronic Resource
    Electronic Resource
    Spin-dependent effects in porous silicon (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2569-2571 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Luminescent anodically etched porous silicon is studied with electron spin resonance, optically detected magnetic resonance, and spin-dependent photoconductivity. The Pb center, the silicon dangling bond at the crystalline Si/SiO2 interface, is found to be the dominant paramagnetic defect, influencing both photoconductivity and photoluminescence. The assignment is supported by the observation of the corresponding 29Si hyperfine lines. A second hyperfine split pair is attributed to Si-F complexes formed during the etching process and remaining in the porous material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108129
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