Publication Date:
2015-11-20
Description:
Author(s): E. Vitiello, M. Virgilio, A. Giorgioni, J. Frigerio, E. Gatti, S. De Cesari, E. Bonera, E. Grilli, G. Isella, and F. Pezzoli The circular polarization of direct gap emission of Ge is studied in optically excited tensile-strained Ge-on-Si heterostructures as a function of doping and temperature. Owing to the spin-dependent optical selection rules, the radiative recombinations involving strain-split light ( c Γ -LH ) and heavy … [Phys. Rev. B 92, 201203(R)] Published Thu Nov 19, 2015
Keywords:
Semiconductors I: bulk
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
Permalink