ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The fabrication of high sensitive diodes array is very attractive for spectroscopic andastronomical UV imaging applications, particularly when visible light rejection is required. Wideband gap materials are excellent candidates for UV “visible blind” detection. In this paper, wedemonstrate an array of Schottky UV-diodes on 4H-SiC with a single pixel area of about 1.44 mm2and a total area of about 29 mm2. The Schottky photodiodes are based on the pinch-off surfaceeffect, the front electrode being an interdigit Ni2Si contact that allows the direct light exposure ofthe optically active device area. For the proposed array, the optically active area is about the 48 %of total area. The single pixel dark current was below 0.1 nA up to –50 V and a fabrication yield ofabout 90 % was observed. The external quantum efficiency of the proposed array exhibits a peak of45 % at the 289 nm wavelength and a visible rejection ratio 〉 4 ×103
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.945.pdf
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