Publication Date:
2011-07-29
Description:
Author(s): A. Bonanni, M. Sawicki, T. Devillers, W. Stefanowicz, B. Faina, Tian Li, T. E. Winkler, D. Sztenkiel, A. Navarro-Quezada, M. Rovezzi, R. Jakieła, A. Grois, M. Wegscheider, W. Jantsch, J. Suffczyński, F. D’Acapito, A. Meingast, G. Kothleitner, and T. Dietl The sign, magnitude, and range of the exchange couplings between pairs of Mn ions is determined for (Ga,Mn)N and (Ga,Mn)N:Si with x ≲3 %. The samples have been grown by metalorganic vapor phase epitaxy and characterized by secondary-ion mass spectroscopy; high-resolution transmission electron microsco... [Phys. Rev. B 84, 035206] Published Thu Jul 28, 2011
Keywords:
Semiconductors I: bulk
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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