ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
This report investigates the advantages of high-k materials as gate dielectrics for highpower SiC trench MOSFET devices, by means of TCAD simulation. The study makes acomparison between the breakdown characteristics of gate dielectrics comprising SiO2, HfO2 andTiO2. I-V and Transfer functions show forward characteristics with on-state resistivity of8.27 m*⋅cm2, 8.65 m*⋅cm2, 15.8 m*⋅cm2 for the respective devices, at a gate voltage of 20 V. Thethreshold voltage is 10 V for all devices. The blocking voltage for the HfO2 and TiO2 is increasedfrom 1800 V (for the SiO2 device) to 2200 V. With a peak electric field of 12 MV/cm through theoxide of the SiO2 device is reduced to 3.2 MV/cm for the HfO2 and 2.3 MV/cm for the TiO2devices
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.839.pdf
Permalink