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  • 1
    Electronic Resource
    Electronic Resource
    Tunneling hot electron transistor as a high power source at terahertz frequencies (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2463-2465 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel device is proposed, based upon a tunneling hot electron transfer amplifier, which exhibits the characteristics of negative differential resistance (NDR) coupled with high current gain. The mechanism which produces the NDR is known to be extremely fast. The combination of these features suggests that such a device could be used as a high power source of terahertz radiation. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112708
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  • 2
    Electronic Resource
    Electronic Resource
    Hall effect in a highly inhomogeneous magnetic field distribution (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 3721-3725 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two-dimensional Hall probes are becoming increasingly popular as "local" magnetometers for ferromagnetic and superconducting materials. In many applications, the magnetic field at a sample surface varies on a length scale much smaller than the Hall probe dimensions, and data interpretation requires a quantitative model of the Hall voltage in this situation. We present here a classical numerical model of the Hall effect in a strongly inhomogeneous magnetic field and show how a response function can be defined to calculate the Hall voltage for an arbitrary magnetic-field distribution. The results are successfully applied to recent scanning Hall probe microscopy data on superconducting vortices. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365494
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  • 3
    Electronic Resource
    Electronic Resource
    Hydrostatic pressure studies of an asymmetrically doped resonant tunneling diode (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1548-1552 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study has been made of the effect of hydrostatic pressure on an AlAs/GaAs/AlAs resonant tunneling diode in which the electrodes have been deliberately asymmetrically doped. In reverse bias, current is injected into the structure from a highly doped n+-GaAs electrode and in forward bias from a two-dimensional accumulation layer at the GaAs/AlAs interface. When large hydrostatic pressures are applied at 77 K, regions of negative differential resistance are induced in both bias directions. Current maxima with peak-to-valley ratios as large as 4 have been measured at 8 kbar. The intrinsic asymmetry of the structure aids in the identification of the origins of these features in terms of the X-point conduction-band minima of the device.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349571
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  • 4
    Electronic Resource
    Electronic Resource
    Hot electron spectroscopy of carrier relaxation within indirect AlAs tunnel barriers (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3539-3541 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hot electron spectroscopy has been performed on electrons which have tunneled through indirect AlAs potential barriers in a tunneling hot electron transfer amplifier. We find that only about 1% of the electrons are collected close to their injection energy in stark contrast to an otherwise identical structure with an Al0.5Ga0.5As barrier where this fraction was 30%. Measurements under hydrostatic pressure show clear evidence for the real-space transfer of electrons from the emitter electrode into an X-point barrier subband adjacent to the emitter Fermi band. A detailed analysis of hot electron spectra reveals that the transferred electrons undergo strong inelastic scattering within the AlAs barrier and relax down through the ladder of X-point subbands there before being reemitted into the base layer. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125381
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  • 5
    Electronic Resource
    Electronic Resource
    Scanning Hall probe microscopy of flux penetration into a superconducting YBa2Cu3O7−δ thin film strip (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1586-1588 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A high-resolution scanning Hall probe microscope has been used to measure flux profiles across one "wire" of a long YBa2Cu3O7−δ thin-film meander line as a function of both transport current density and applied magnetic field. Flux bundle penetration due to an applied current or magnetic field is demonstrated to occur at the same regions at the edge of the strip. A correlation between the surface topography of the meander line edges and the regions of penetration has been established. Penetrating flux profiles at low temperatures are in qualitative agreement with theories of dynamical instability of the order parameter. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1352041
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  • 6
    Electronic Resource
    Electronic Resource
    Real-time scanning Hall probe microscopy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1324-1326 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a low-noise scanning Hall probe microscope having unprecedented magnetic field sensitivity (∼2.9×10−8 T/(square root of)Hz at 77 K), high spatial resolution, (∼0.85 μm), and operating in real-time (∼1 frame/s) for studying flux profiles at surfaces. A submicron Hall probe manufactured in a GaAs/AlGaAs two-dimensional electron gas (2DEG) is scanned over the sample to measure the surface magnetic fields using conventional scanning tunneling microscopy positioning techniques. Flux penetration into a high Tc YBa2Cu3O7−δ thin film has been observed in real time at 85 K with single vortex resolution. Flux is seen to enter the film in the form of vortex bundles as well as single flux quanta, Φ0. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117582
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  • 7
    Electronic Resource
    Electronic Resource
    Optical suppression of ionized impurity scattering in vertical hot-electron transport (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 3157-3159 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A striking effect of illumination on the vertical nonequilibrium electron transport has been observed in the GaAs-based tunneling hot electron transfer amplifier (THETA). Weak illumination can considerably increase the transparency of a THETA structure for quasiballistic electrons if the photon energy exceeds the GaAs band gap. The temperature and illumination intensity dependencies indicate that the effect is caused by photoneutralization of ionized impurities which are a major source of hot electron scattering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107962
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  • 8
    Electronic Resource
    Electronic Resource
    Investigations of quantum trench tunneling diodes (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1544-1546 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the realization of a new type of lateral tunneling diode with the potential for ultrahigh frequency (THz) operation. The diodes, which are fabricated by etching tiny quantum trenches into the surface of a GaAs/AlGaAs heterostructure, display extremely nonlinear current-voltage characteristics. Tunneling barrier heights are obtained from a study of thermally activated current, and results are compared to those of a theoretical model of the structure based on the finite difference form of the Poisson equation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108635
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  • 9
    Electronic Resource
    Electronic Resource
    A study of resonant tunneling in a 3-terminal ballistic device
    Amsterdam : Elsevier
    Solid State Electronics 32 (1989), S. 1161-1165 
    Details
    ISSN: 0038-1101
    Keywords: Resonant tunneling ; ballistic transport ; hot electron transistor ; sequential tunneling
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0038-1101(89)90207-4
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  • 10
    Electronic Resource
    Electronic Resource
    Vortex imaging in superconducting films by scanning hall probe microscopy (1996)
    Springer
    Journal of low temperature physics 105 (1996), S. 1135-1140 
    Details
    ISSN: 1573-7357
    Keywords: 74.30C ; 74.60G
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We have used a low noise Scanning Hall Probe Microscope (SHPM) to study vortex structures in superconducting films. The microscope has high magnetic field (∼2.9×10−8T/√Hz at 77K) and spatial resolution, ∼0.85μm. Magnetic field profiles of single vortices in High Tc YBa2Cu3O7−δ thin films have been successfully measured and the microscopic penetration depth of the superconductor has been extracted as a function of temperature. Flux penetration into the superconductor has been imaged in real time (∼8s/frame).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00753852
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