ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Study of hydrogenated amorphous silicon nitride films prepared by RF magnetron sputtering (1991)
    Springer
    Applied physics 52 (1991), S. 339-343 
    Details
    ISSN: 1432-0630
    Keywords: 81.15.Cd ; 72.80.-r ; 72.80.Ng
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Hydrogenated amorphous silicon nitride films have been deposited by the rf magnetron sputtering method with non-stoichiometric and stoichiometric compositions using a poly-Si target and a mixture of Ar, H2 and N2 as the sputtering gas. Data on optical and infrared absorption, electrical conductivity, breakdown voltage, capacitance measurements and thermal evolution of hydrogen have been presented as a function of nitrogen concentration in the films, especially in the stoichiometric region of composition. Attempts have been made to identify the roles of hydrogen and nitrogen in determining the electrical and optical properties and thermal stability exhibited by the films. Properties relevant for device application of the material have been shown to be comparable to those obtained by glow discharge or electron cyclotron resonance plasma chemical vapour deposition methods of deposition. RF magnetron sputtering has therefore been suggested as a viable alternative to the more widely adopted CVD methods for device applications of silicon nitride, where the use of hazardous process gases can be avoided.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324776
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Low-power deposition of fluorinated microcrystalline silicon hydrogen alloy films (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4024-4027 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fluorinated microcrystalline silicon hydrogen alloy films have been prepared by the radio frequency glow-discharge decomposition of silicon tetrafluoride/hydrogen mixtures. Thereby, μc-Si:F:H films with high dark conductivity (∼10−3 Ω−1 cm−1), high photoconductivity (∼10−4 Ω−1 cm−1), showing crystalline structure in selected-area transmission electron microscope diffraction patterns as well as sharp infrared absorption and Raman shift spectra have been obtained under conditions of low-power density (∼0.15 W cm−2) and hydrogen dilution (∼20%).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343432
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Heterogeneity in microcrystalline-transition state: Origin of Si-nucleation and microcrystallization at higher rf power from Ar-diluted SiH4 plasma (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3041-3048 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using very high Ar-dilution to the SiH4 plasma, good quality amorphous Si:H films could be obtained at very low rf power. The a-Si:H film, prepared at a very low deposition rate of ∼10 Å/min, exhibited a σPh∼1×10−4 S cm−1, σPh/σD∼105, a notably wide optical gap of 2.10 eV and a very good stability against thermal annealing effects with reasonable light induced degradation. At higher rf power undoped μc-Si:H films were prepared with a high σD∼1×10−4 S cm−1, at a deposition rate of 30 Å/min from 〈1 sccm of SiH4. Micrograins were identified with several well-defined crystallographic orientations. However, porosity in the grain boundary zone contributed a significant amount of adsorbed effects on the electrical properties. At very high powers, the growth of a columnar network structure was demonstrated. Long-range structural relaxation permitted by the non-rigid and heterogeneous network structure associated with the physical vapor deposition-like growth at the microcrystalline-transition state, has been identified as the origin of nucleation to the Si network and microcrystallization at higher power. It is proposed that Ar* in the Ar-diluted plasma provides the energy required for nucleation and grain growth during microcrystallization, and plays an analogous role as atomic H does during chemical annealing in H2-diluted plasma. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1345852
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Hydrogenated amorphous silicon films prepared at high substrate temperature: Properties and light induced degradation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7435-7440 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Of the different deposition parameters, the substrate temperature Ts has a profound effect on the microstructure and optoelectronic properties of hydrogenated amorphous silicon (a-Si:H). A detailed study was done to evaluate a-Si:H materials deposited at high substrate temperatures (≥325 °C). Their characteristics and nature of light induced degradation were compared to a-Si:H deposited at 200 °C. Electrical properties were studied with coplanar electrode structure as well as on Schottky barrier devices. Absorption measurements in the visible and infrared regions and spin-density measurements were carried out. For high Ts (≥325 °C) the presence of acceptorlike defects are indicated in addition to the neutral dangling bonds. Annealing recovery from the light soaked state is slower as compared to a film deposited at 200 °C. The results have been discussed in connection with the role of hydrogen motion in the annealing of light induced defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353986
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Effect of ultraviolet irradiation on the white light degraded electronic properties of hydrogenated amorphous silicon films (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1975-1977 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic properties of hydrogenated amorphous silicon (a-Si:H) thin films are known to undergo metastable light-induced changes that can be reversed by annealing at elevated temperatures. We have observed for the first time that annealing of the light-induced changes in the dark conductivity and photoconductivity of a-Si:H thin films can also be achieved by ultraviolet (UV) irradiation (wavelength ∼254 nm) of the films at room temperature. It has been shown that the bulk photoconductivity changes in spite of the fact that UV radiation is mostly absorbed near the top surface of the films. A simple explanation of the observed phenomena has been proposed involving a nonequilibrium distribution of phonons generated by absorption of high-energy photons in the material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102137
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Study of effects of interelectrode spacing and preheating of source gases on hydrogenated amorphous silicon films prepared at high growth rates (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3193-3199 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of interelectrode spacing on the properties of hydrogenated amorphous silicon (a-Si:H) films grown at high radio-frequency (rf) power density by rf plasma enhanced chemical vapor deposition method, with control of dusty plasma conditions by heating both the electrodes, was investigated. The formation of precursors responsible for gas phase polymerization itself was sought to be controlled by preheating of the source gas mixture. Optimization of the interelectrode spacing for film characteristics was carried out for this novel deposition technique combining cathode heating and preheating of the source gases. The films were characterized by infrared vibrational spectroscopy, absorption and reflection measurements in the visible and near infrared regions, measurements of dark and photo-conductivity (with light induced degradation), and electron spin resonance spectroscopy. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360689
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    The role of hydrogen dilution and radio frequency power in the formation of microcrystallinity of n-type Si:H thin film (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5561-5568 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phosphorus doped n-type hydrogenated microcrystalline silicon (μc-Si:H) films have been prepared at low power densities suitable for application in solar cells by the usual radio-frequency plasma enhanced chemical vapor deposition method (rf-PECVD, 13.56 MHz). For this purpose hydrogen (H2) dilution in the silane (SiH4) and phosphine (PH3) gas mixture and rf power densities have been varied carefully to produce a plasma condition conducive to the growth of microcrystallinity. The structural properties of the films have been studied by Raman spectroscopy, x-ray diffractometry, transmission electron microscopy, and infrared vibrational spectroscopy. The electrical and optical characterizations have been done by dark conductivity, dark conductivity activation energy, and optical absorption measurements, respectively. Effects of variations of hydrogen dilution and rf power density on the electrical and structural properties of the films have been investigated thoroughly. Film with highest conductivity (32.6 S cm−1) has been obtained with a H2/SiH4 ratio of 90 and rf power density 30 mW/cm2. At lower hydrogen dilution (H2/SiH4=20), higher power density (180 mW/cm2) is required to produce the desired microcrystallinity. Attempt has been made to explain the results in terms of growth kinetics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354216
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Control of powder formation in silane discharge by cathode heating and hydrogen dilution for high-rate deposition of hydrogenated amorphous silicon thin films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4540-4545 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenated amorphous silicon (a-Si:H) films have been deposited at high growth rates by increasing the rf power density while the optoelectronic quality of the films has been concurrently taken care of by controlling powder formation due to gas-phase polymerization in the plasma. This has been achieved by heating the cathode together with the anode in the capacitive coupling arrangement and keeping the cathode temperature close to that of the anode. This, together with hydrogen dilution of the source gas, has been used to control powder formation in the silane discharge. The films have been evaluated by optical and infrared vibrational spectroscopy, dark conductivity, secondary photoconductivity, and internal quantum efficiency measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354371
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Role of hydrogen in controlling the growth of μc-Si:H films from argon diluted SiH4 plasma (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5442-5448 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenated microcrystalline silicon thin films have been prepared by the rf glow discharge method using argon as a diluent of SiH4 to achieve a high growth rate. μc-Si:H film having conductivity ∼10−5 S cm−1 was achieved at a deposition rate of 36 Å/min at a moderate power density of 90 mW/cm2, without hydrogen dilution. Micrograins were identified with several well defined crystallographic orientations. Inhomogeneity and porosity at the grain boundary zone have a significant effect on the electrical properties of the films due to adsorption when exposed to atmosphere. However, by adding hydrogen to the Ar-diluted SiH4 plasma, a homogeneous and improved network structure without having any effect of adsorption was obtained at a reduced deposition rate. Highly conducting (σD∼10−3 S cm−1) undoped μc-Si:H film was prepared at a deposition rate of 15 Å/min having 90% crystalline volume fraction. The energy released by the de-excitation of Ar* in the plasma initiates rapid nucleation in the Si network and atomic hydrogen in the plasma helps in the defect elimination, structural reorientation, and grain growth. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1454201
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Degradation of tin-doped indium-oxide film in hydrogen and argon plasma (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 912-916 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The degradation of tin-doped indium-oxide (ITO) films in glow-discharge plasmas of hydrogen and argon have been investigated. Parameters which have been varied for the study include the temperature of ITO under ion bombardment, the rf power density, the time of exposure to plasma, and the gas flow rate. After bombardment, scanning electron micrograph observation, measurement of sheet resistance, transmittance and reflectance, and Auger analysis have been carried out to decide the extent of degradation. Magnetron-sputtered ITO films have been found to be more resistant to ion bombardment damage compared to electron-beam evaporated films. The degradation of ITO under the plasma of the reducing species such as hydrogen has been found to take place at lower temperature and power density compared to argon plasma.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339699
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...