ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract Theoretical models of irregular eutectic growth are reviewed, and constrained growth of Al-Si eutectic has been experimentally investigated to quantitatively check these models. A thermal-difference amplifying method has been applied to measure the supercooling of the growing interface. Our results support a revised Jackson-Hunt model of interface supercooling. The dependence of the supercooling on temperature gradient is presented. At low growth rate, dependence of silicon branching on temperature gradient has been observed. The inter-phase spacing decreases with increases of growth rate and temperature gradient.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01117919
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